Bordered Single Layer Capacitor 10pF 100V Low ESR Capacitor TiW-Au Metallization

HACC100S10V101 Bordered Single Layer Ceramic Chip Capacitor (10pF,100V)

What is a Single-Sided Bordered (Margin) Single Layer Capacitor?

In high-density microwave hybrid integrated circuits (ICs), engineers face a common assembly challenge: during die attachment, conductive silver epoxy (such as H20E) can bleed out, creep up the sides of the chip capacitor, and bridge with the top electrode, causing a catastrophic short circuit.

The HACC100S10V101 resolves this with its Single-Sided Bordered (Margin) Design. As shown in the product image, the top surface consists of a central high-purity gold electrode (TiW-Au) surrounded by a precise, un-metallized dark ceramic border (Margin). This exposed ceramic frame acts as a physical barrier, effectively blocking any epoxy bleed-out from contacting the active top electrode, guaranteeing zero-defect bonding during automated assembly.

Material & Thin-Film Metallization Structure
The HACC100S10V101 features a premium, multi-layer thin-film metallization system to ensure long-term reliability under severe thermal and mechanical stresses:

•Top Electrode: TiW-Au (Titanium-Tungsten / Gold) with an overall gold thickness of ≥ 2.5 µm Min. This thick, high-purity gold layer is optimized for high-reliability thermosonic gold wire bonding (Au wire-bonding).
•Bottom Electrode: TiW-Pt-Au (Titanium-Tungsten / Platinum / Gold) with an overall thickness of ≥ 2.5 µm Min. The inclusion of a Platinum (Pt) barrier layer prevents silver-to-gold intermetallic migration when using silver conductive epoxies, ensuring maximum adhesion.

Dimensions

Technical Specifications (HACC100S10V101)

Assembly & Gold Wire Bonding Best Practices

To achieve an optimal assembly yield when integrating the HACC100S10V101 into your RF modules:

1.Conductive Epoxy Die-Attach:
•Mounting with conductive silver epoxy (e.g., H20E) is highly recommended.
•Recommended Baking/Curing Profile: Bake at 120℃ for 30 minutes to ensure robust mechanical and electrical attachment.
2.Gold Wire Bonding Wedge Margin:
•To prevent micro-cracking of the ceramic or delamination of the gold film during thermosonic wire-bonding, the bonding ball/wedge must be placed at least 25 µm away from the outer edge of the gold pad.
3.Die Placement Force:
•Keep the pick-and-place nozzle force controlled to prevent localized stress on the single-layer ceramic body.

Typical High-Frequency Microwave Applications
•5G & 6G Millimeter-Wave (mmWave) Small Cells
•Optoelectronic Transceivers (100G/400G SFP/QSFP Modules)
•GaAs, GaN & InP High-Power RF Amplifiers (Bypass & Decoupling)
•LNA (Low Noise Amplifier) DC Blocking Circuits
•Satellite Communications (Satcom) and Tactical Avionics

Xi'an Hoan Microwave Co., Ltd. was established in 2005. The company is located in the High-tech Zone of Xi'an. The company covers an area of ​​800 square meters, including 500 square meters of production area and 300 square meters of office area. It is a professional enterprise specializing in the development, production, sales and technical services of and civilian electronic components, cable assemblies, high-precision electrical connectors, vibration isolators, microwave antennas, waterproof breathable valves and other products.

Our products are widely used in electronic equipment, aviation communications, postal and telecommunications, civilian electrical appliances, instrumentation and other technical fields. The products are sold all over the country. At present, there are more than 100 and civilian customers.

Hoan has obtained ISO9001:2005 quality management system certification and equipment quality management system certification. Since its establishment, the company has strictly organized and implemented operations in accordance with the standard requirements of the quality management system. The product quality is stable and reliable. There have been no customer complaints about quality and leakage accidents, and no production safety accidents.