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| Categories | Single Layer Capacitor |
|---|---|
| Metallization Structure: | Top: TiW-Au (>=2.5µm); Bottom: TiW-Pt-Au (>=2.5µm) |
| Substrate Type: | P-type Silicon |
| Package Type: | Chip |
| Brand Name: | Hoan |
| Leakage Current: | 1 nA |
| Adhesive Process: | Conductive Epoxy H20E (Cure: 120°C / 30 min) |
| Place of Origin: | china |
| Model Number: | HACC220S15V500 |
| Payment Terms: | L/C,D/A,D/P,T/T, |
| MOQ: | 10 |
| Wire Bonding Clearance: | Gold wire bond position ≥25 µm from electrode edge |
| Outline Dimensions: | 0.38 × 0.38 × 0.15 mm |
| Company Info. |
| HongAn Microwave Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
High-Frequency Technical Summary
The HACC220S15V500 is an ultra-miniature, high-frequency
Single-Sided Bordered Single Layer Ceramic Capacitor (SLC). This
model is engineered specifically for broadband DC blocking, RF
coupling, and microwave tuning in the millimeter-wave spectrum up
to 40.0 GHz (covering S, C, X, Ku, K, and Ka-band hybrid
microcircuits). Delivering an ultra-low 22 pF ± 10% capacitance and
rated for a continuous working voltage of 50 V, it is packed into
an incredibly compact 15 mil × 15 mil (0.38 mm × 0.38 mm) outline
with a ultra-low profile height of 0.15 mm.
Designed with a single-sided bordered structure, the top gold electrode has a clean insulating ceramic margin. This border prevents conductive epoxy climb-up or solder bleed-out from short-circuiting the device. The bottom electrode features a fully metallized, solder leach-resistant TiW-Pt-Au structure, making it highly compatible with both silver epoxies and high-temperature eutectic solders.
Key Performance Advantages
Broadband Millimeter-Wave Coupling (0.8 - 40.0 GHz): Due to its
ultra-low capacitance (22 pF) and microscopic size, it exhibits
exceptionally low insertion loss and high self-resonant frequency
(SRF), behaving as a near-perfect transmission element.
Insulating Margin Prevention: The single-sided ceramic border acts
as a physical dam to stop conductive silver epoxy from climbing
onto the top electrode, ensuring reliable, short-free die
attachment.
Asymmetrical Metallization (Pt Solder Barrier): Top contact has
TiW-Au (2.5 µm Min) for gold wire thermosonic bonding. Bottom has
TiW-Pt-Au (2.5 µm Min) where the Platinum (Pt) layer acts as a
premium barrier against gold scavenging/leaching.
Ultra-Low Profile Height: At only 0.15 mm, it sits perfectly flat
inside microscopic RF cavities, minimizing parasitic inductance.
Overall Dimensions

Comprehensive Parameter Datasheet
| Specifications Category | Technical Parameter Name | Guaranteed Values | Testing / Measurement Conditions |
| Electrical Specs | Nominal Capacitance | 22 | pF (+10% Tolerance @ 1kHz,1Vrms, 25°C) |
| Rated Working Voltage(DC) | 50 | V (Maximum continuous rating) | |
| Dissipation Factor (DF) | ≤1.5% | Tested at 1 kHz, 1.0 Vrms, 25°C | |
| Insulation Resistance(IR) | ≥104MΩ | Tested at rated voltage DC, 25°C | |
| Recommended Frequency Band | 0.8 -40.0 | GHz (Broadband Coupling and DC Blocking) | |
| Physical Geometry | Outline Dimensions | 0.38 x 0.38 x 0.15 | mm (Length x Width x Height / 15 x15 x6 mil) |
| Design Architecture | Single-Sided Bordered | Exposed insulating ceramic marginon the top surface | |
| Metallization Stack | Top Surface Metallurgy | TiW-Au | Gold-bonding optimized (≥2.5 um thickness) |
| Bottom Surface Metallurgy | TiW-Pt-Au | Leach-resistant Platinum barrier ( ≥2.5 um thickness) | |
| Assembly Processes | Mount Adhesion | Conductive Epoxy/Solder | Suitable for silver epoxy H20E / AuSn eutectic |
| Interconnect Connection | Gold Wire / Ribbon Bond | Thermosonic gold wire bonding compatible | |
| Reliability & Quality | Operating Temperature | -55 to +125 | ℃ (Industrial & National security Grade) |
| Storage Temperature & RH | 20-25°C,40%-60% RH | Cleanroom environment | |
| Guaranteed Shelf Life | 1 | Year (Under optimal storage conditions) |
Thin-Film Metallization Stack Engineering
To ensure reliable wire bonding on the top and prevent solder
scavenging on the bottom, the HACC220S15V500utilizes a
high-reliability thin-film metallization system:
| Metallization Side | Metal Layer | Sputtered Material | Standard Layer Thickness | Metallurgical Function & Engineering Value |
| Top Contact | Adhesion & Barrier | TiW (Titanium- Tungsten) | Sputtered Base | Provides a highly stable, oxygen- blocking chemical bond to the ceramicsubstrate; prevents peeling. |
| Bonding Finish | Au (Gold) | ≥ 2.5 µm | Oxide-free surface optimized for gold wire thermosonic bonding and wedge bonding. | |
| Bottom Contact | Adhesion & Barrier | TiW (Titanium-Tungsten) | Sputtered Base | Symmetrical base bonding to the bottom ceramic. |
| Barrier Layer | Pt (Platinum) | Sputtered Barrier | High-density barrier that prevents goldfrom diffusing or dissolving into solders/epoxies under thermal stress | |
| Bonding Finish | Au (Gold) | ≥2.5 µm | Solderable and epoxy-compatible bottom finish. |
S-Parameter Engineering & Sub-Millimeter Assembly Guide
To maximize high-frequency coupling and bypass efficiency while
preventing mechanical damage, assembly engineers must adhere to the
following guidelines:
Epotek H20E Conductive Silver Epoxy SOP
Adhesive Specification: Use high-reliability, low-outgassing
conductive silver epoxy (e.g., Epotek H20E).
Dispensing Guidelines: Apply a microscopic dot of epoxy. Thanks to
the top ceramic border on the HACC220S15V500, the epoxy is
physically prevented from bridging to the top contact.
Thermal Cure Profile: Cure at 120°C for 30 minutes (or
alternatively 150°C for 15 minutes) with a slow-ramp cool-down to
eliminate thermal shock on the ceramic substrate.
Gold Wire & Ribbon Bonding Constraints
Bonding Method: Compatible with thermosonic gold wire bonding
(ball-stitch or wedge-wedge) and gold ribbon bonding.
Safe Bonding Clearance: The bonding wedge or capillary tip must
land on the top gold pad at least 25 µm away from the electrode
border edge. Bonding too close to the ceramic border will cause
localized shearing forces, risking gold peeling or micro-cracks in
the dielectric.
Bonding Force: Control capillary pressure to prevent
micro-fracturing the thin 0.15 mm ceramic wafer.
FAQ
Q1: What is the benefit of the TiW-Pt-Au bottom metallization on
the HACC220S15V500?
A:During gold wire bonding or high-temperature solder reflow,
standard gold-plated electrodes can suffer from "gold scavenging,"
where the gold dissolves or migrates into the mounting medium,
weakening the bond. The bottom of the HACC220S15V500 features a
sputtered Platinum (Pt) barrier layer between the TiW base and the
Au finish. Platinum acts as a highly effective diffusion block that
does not dissolve in solders, ensuring absolute mechanical adhesion
and a highly reliable low-resistance connection.
Q2: Why is the HACC220S15V500 highly recommended for
millimeter-wave bands up to 40 GHz?
A:In the millimeter-wave spectrum (e.g., K-band, Ka-band), parasitic
inductance and resistance must be minimized. Multi-layer capacitors
(MLCCs) have relatively high parasitic inductance (ESL) due to
their multi-electrode structure, which leads to self-resonance at
lower frequencies. The HACC220S15V500 is a single-layer capacitor
with an ultra-short coaxial-like path, yielding exceptionally low
ESL and ESR. With a tiny 22 pF capacity and a microscopic 15 mil
footprint, its self-resonant frequency is extremely high, allowing
it to behave as an almost ideal transmission element up to 40 GHz.
Q3: Why does this model use a single-sided bordered design instead
of a double-sided bordered design?
A:The single-sided bordered design is optimized for maximum ground
contact area. By keeping the bottom electrode fully metallized
(borderless), the capacitor achieves a larger bonding contact area
on the substrate housing. This maximizes electrical ground contact,
yielding the lowest possible RF impedance and excellent thermal
heat transfer, while the top bordered electrode still provides 100%
protection against short-circuits.
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