High-Temperature Silicon Carbide (SiC) Heating Elements | 1550°C
Capability
Discover durable, economical Silicon Carbide (SiC) heating elements
engineered for extreme environments up to 1550°C. These premium
heating solutions are ideal for metallurgy, ceramics, glass
manufacturing, and laboratory equipment applications.
Silicon Carbide (SiC) Electric Heating Elements
Silicon Carbide (SiC) heating elements are premium non-metal
electric heaters specifically designed for extreme temperatures and
harsh industrial environments. Manufactured from high-purity green
silicon carbide, they undergo precise forming, siliconizing, and
recrystallization processes at high temperatures to deliver
reliable, long-lasting performance. These elements represent the
optimal economical solution for demanding high-temperature
applications.
Key Applications of SiC Heating Elements
- Electronics Manufacturing
- Metallurgical Processing
- Aluminum & Zinc Industries
- Ceramics & Porcelain Kilns
- Float Glass Production
- Optical Glass Manufacturing
- Laboratory & Research Furnaces
- Fluorescent Powder Processing
Operating Guidelines: Surface Load & Atmospheric Effects
For optimal performance and extended lifespan, it is crucial to
operate within recommended surface load limits based on your
furnace atmosphere and temperature conditions.
| Atmosphere | Max. Furnace Temp. (°C) | Max. Surface Load (W/cm²) | Effect on SiC Element |
|---|
| Ammonia (NH₃) | 1290 | 3.8 | Produces methane, damaging the protective SiO₂ layer |
| Carbon Dioxide (CO₂) | 1450 | 3.1 | Corrosive to silicon carbide |
| Carbon Monoxide (CO) | 1370 | 3.8 | Carbon deposition can impair the SiO₂ layer |
| Halogen Gases | 704 | 3.8 | Highly corrosive; destroys SiO₂ layer |
| Hydrogen (H₂) | 1290 | 3.1 | Produces methane, damaging the protective SiO₂ layer |
| Nitrogen (N₂) | 1370 | 3.1 | Can form an insulating silicon nitride layer |
| Sodium Vapor | 1310 | 3.8 | Corrosive to silicon carbide |
| Silicon Dioxide | 1310 | 3.8 | Corrosive to silicon carbide |
| Oxygen / Air | 1310 | 3.8 | Oxidizes SiC (forms protective SiO₂ at correct temps) |
| Water Vapor | 1090-1370 | 3.1-3.6 | Forms silicon hydrates, accelerating aging |
| Hydrocarbons | 1370 | 3.1 | Carbon pickup leads to "hot spot" failure |
How to Order: Required Specifications
Please provide the following details for a quote or order:
- Type: (e.g., Standard "U" Shape)
- Outer Diameter (OD): in mm or inches
- Hot Zone Length (HZ): The heated section length
- Cold End Length (CZ): The unheated terminal section length
- Shank Spacing (A): Center-to-center distance between cold ends
- Overall Resistance: Rated resistance in ohms (Ω)
Ordering Example
Specification: U-Type, 20mm OD, 300mm Hot Zone, 200mm Cold Ends, 60mm Shank
Spacing, 1.84Ω Resistance
SiC U20/300/200/60/1.84Ω