| Sign In | Join Free | My infospaceinc.com |
|
| Sign In | Join Free | My infospaceinc.com |
|
| Categories | Single Bipolar Transistors |
|---|---|
| Current - Collector Cutoff: | 100nA |
| Emitter-Base Voltage(Vebo): | 6V |
| Pd - Power Dissipation: | 500mW |
| Transition frequency(fT): | 210MHz |
| type: | NPN |
| Current - Collector(Ic): | 2A |
| Collector - Emitter Voltage VCEO: | 50V |
| Operating Temperature: | -55℃~+150℃@(Tj) |
| Description: | Bipolar (BJT) Transistor NPN 50V 2A 210MHz 500mW Surface Mount SOT-89 |
| Mfr. Part #: | 2SC4672 |
| Model Number: | 2SC4672 |
| Package: | SOT-89 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The 2SC4672 is an NPN transistor featuring low saturation voltage and excellent hFE characteristics. It is complementary to the 2SA1797 and is suitable for various electronic applications.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector- base breakdown voltage | VCBO | Ic= 50 A IE= 0 | 60 | V | ||
| Collector- emitter breakdown voltage | VCEO | Ic= 1 mA IB= 0 | 50 | V | ||
| Emitter - base breakdown voltage | VEBO | IE= 50A IC=0 | 6 | V | ||
| Collector-base cut-off current | ICBO | VCB= 60V , IE= 0 | 0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB= 5V , IC=0 | 0.1 | uA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A, IB=50mA | 0.35 | V | ||
| Base - emitter saturation voltage | VBE(sat) | IC=1A, IB=50mA | 1.2 | V | ||
| DC current gain | hFE | VCE= 2V, IC= 500mA | 82 | 390 | ||
| Collector output capacitance | Cob | VCB= 10V, IE= 0,f=1MHz | 25 | pF | ||
| Transition frequency | fT | VCE= 2V, IC= 500mA,f=100MHz | 210 | MHz |
| Type | Range | Marking |
|---|---|---|
| 2SC4672-P | 82-180 | DKP |
| 2SC4672-Q | 120-270 | DKQ |
| 2SC4672-R | 180-390 | DKR |
| Symbol | Dimensions (mm) | MIN | NOM | MAX |
|---|---|---|---|---|
| A | 1.40 | - | 1.60 | |
| b | 0.44 | - | 0.56 | |
| b1 | 0.36 | - | 0.48 | |
| C | 0.3 | - | 0.5 | |
| D | 4.40 | - | 4.60 | |
| D1 | 1.50 | - | 1.75 | |
| E | 2.29 | - | 2.60 | |
| E1 | 2.00 | - | 2.29 | |
| e | 1.50 BSC | - | ||
| e1 | 3.00 BSC | - | ||
| H | 3.94 | - | 4.25 | |
| L | 0.89 | - | 1.20 |
|
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP Type in TO3P Plastic Package
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for Electronic Circuits
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation and SOT23 Package
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency switching power supplies
Durable NPN silicon transistor Minos TIP41C designed for audio power amplification in TO220 package
Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification
Epitaxial silicon planar PNP transistor for switching applications RoHS compliant GOODWORK 2SA1015
General Purpose PNP Transistor LRC LBC856BWT1G SOT323 Package RoHS Compliant Suitable for Amplifiers
Silkor 2N3906 General Purpose PNP Silicon Transistor TO92 Package Ideal for Low Current Applications
Medium power NPN transistor UTC 2N6718G-B-AB3-R featuring 100V voltage and 850mW power dissipation for amplifier switching
