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industrial power device Jilin Sino-Microelectronics 3CT12B Reverse Blocking Triode Thyristor SCR for AC switching

Categories	TRIACs
Holding Current (Ih):	40mA
Current - Gate Trigger(Igt):	25mA
Voltage - On State(Vtm):	1.6V
Average Gate Power Dissipation (PG(AV)):	1W
Current - On State(It(RMS)):	16A
Peak off - state voltage(Vdrm):	800V
Current - Surge(Itsm@f):	190A@10ms
SCR Type:	1 SCR
Gate Trigger Voltage (Vgt):	1.3V
Operating Temperature:	-40℃~+125℃@(Tj)
Description:	40mA 25mA 800V 1 SCR TO-220 TRIACs RoHS
Mfr. Part #:	3CT12B
Model Number:	3CT12B
Package:	TO-220

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industrial power device Jilin Sino-Microelectronics 3CT12B Reverse Blocking Triode Thyristor SCR for AC switching

Product Overview

The 3CT12B is a Reverse Blocking Triode Thyristor (SCR) designed for AC switching and phase control applications. It features a glass-passivated mesa chip for high reliability and uniformity, low on-state voltage, and high surge current capability. This RoHS compliant product is suitable for various industrial and electronic control systems requiring efficient power management.

Product Attributes

Brand: Not explicitly mentioned, but product code suggests a specific manufacturer.
Material: Glass-passivated mesa chip.
Certifications: RoHS compliant.
Package Type: TO-220C.

Technical Specifications

Model	Parameter	Value	Unit	Notes
3CT12B	IT(RMS) - RMS on-state current (180 Conduction angle)	16	A	Tc = 110
3CT12B	VDRM/VRRM - Peak repetitive off-state voltage / Peak repetitive reverse voltage	800	V
3CT12B	IGT - Gate trigger current	1-25	mA	VD=12V, RL=33
3CT12B	IT(AV) - Average on-state current (180 Conduction angle)	10	A	Tc = 110
3CT12B	ITSM - Non-repetitive surge peak on-state current	200	A	Tp=8.3ms, Tc = 25
3CT12B	ITSM - Non-repetitive surge peak on-state current	190	A	Tp=10ms, Tc = 25
3CT12B	I2t - I2t Value for using	200	As	t=10ms, Tc = 25
3CT12B	dI/dt - Critical rate of rise of on-state current	50	A/s	IG=2IGT, tr100ns, F=60Hz, Tc = 125
3CT12B	IGM - Peak gate current	5	A	Tp=20s, Tc = 125
3CT12B	PG(AV) - Average gate power	1	W	Tc = 125
3CT12B	Tstg - Storage junction temperature range	-40 to +150
3CT12B	Tj - Operation junction temperature range	-40 to +125
3CT12B	VRGM - Maximum peak reverse gate voltage	5	V
3CT12B	VGT - Gate trigger voltage	1.3	V	VD=12V, RL=33
3CT12B	VGD - Non-trigger gate-source voltage	0.2	V	VD=VDRM, RL=3.3K, Tj=125
3CT12B	IH - Holding current	40	mA
3CT12B	IL - Latching current	60	mA
3CT12B	dV/dt - Critical rate of rise of off-state voltage	1000	V/s	VDM=67% VDRM, gate open, Tj=125 (MAX)
3CT12B	VTM - Peak on-state voltage	1.6	V	ITM=32A, Tp=380s, Tj=25
3CT12B	VtO - Threshold voltage	0.77	V	Tj=125
3CT12B	Rd - Dynamic resistance	23	m	Tj=125
3CT12B	IDRM - Peak on-state leakage current	5	uA	VDRM = VRRM, Tj=25
3CT12B	IRRM - Peak reverse leakage current	2	mA	VDRM = VRRM, Tj=125
3CT12B	Rth(j-c) - Thermal resistance junction to case (DC)	1.1	/W
3CT12B	Rth(j-a) - Thermal resistance junction to ambient (DC)	60	/W

Package Mechanical Data: TO-220C (Dimensions in mm)

Order Codes:

3CT12B-CA-C (Halogen-Bag)
3CT12B-CA-CR (Halogen-Free-Bag)
3CT12B-CA-B (Halogen-Tube)
3CT12B-CA-BR (Halogen-Free-Tube)

Marking: 3CT12B

2411201846_Jilin-Sino-Microelectronics-3CT12B_C272506.pdf

industrial power device Jilin Sino-Microelectronics 3CT12B Reverse Blocking Triode Thyristor SCR for AC switching

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