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onsemi EMI7204MUTAG EMI Filter Designed to Minimize Wireless Interference in Data Communication Applications

Categories EMI/RFI Filters (LC, RC Networks)
Attenuation Value: 23dB@6GHz
Number of Channels: 4
Resistance: 10Ω
Inductance: 17nH
Capacitance: 24.2pF
Operating Temperature: -40℃~+85℃
Frequency - Cutoff or Center: 250MHz
ESD Protection: Yes
Description: 4 10Ω 17nH 24.2pF 250MHz UDFN-8-EP(1.4x1.7) EMI/RFI Filters (LC, RC Networks) RoHS
Mfr. Part #: EMI7204MUTAG
Model Number: EMI7204MUTAG
Package: UDFN-8-EP(1.4x1.7)
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onsemi EMI7204MUTAG EMI Filter Designed to Minimize Wireless Interference in Data Communication Applications

Product Overview

The EMI720xMU Series is a family of LC EMI filters with integrated ESD protection, designed to minimize wireless interference in parallel interfaces. Featuring L = 17 nH and C = 12 pF, these filters deliver a cutoff frequency of 250 MHz and stop band attenuation greater than -23 dB from 800 MHz to 6.0 GHz. This performance is ideal for applications with data rates up to 125 Mbps, effectively reducing interference from 2G/3G, GPS, Bluetooth, and WLAN signals. The series offers an integrated EMI/ESD system solution in a low-profile UDFN package, providing significant cost, system reliability, and space savings. These devices are Pb-Free.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: Pb-Free

Technical Specifications

ModelChannelsPackage TypePackage ThicknessLead PitchESD ProtectionInductance (L)Capacitance (C)3dB Cutoff Frequency (f3dB)Stop Band AttenuationMax Data Rate
EMI7204MUFourUDFN80.5 mm0.4 mm16 kV IEC61000-4-2 Level 4 (Contact Discharge)17 nH12 pF250 MHz> -23 dB (800 MHz to 6.0 GHz)125 Mbps
EMI7206MUSixUDFN120.5 mm0.4 mm16 kV IEC61000-4-2 Level 4 (Contact Discharge)17 nH12 pF250 MHz> -23 dB (800 MHz to 6.0 GHz)125 Mbps
EMI7208MUEightUDFN160.5 mm0.4 mm16 kV IEC61000-4-2 Level 4 (Contact Discharge)17 nH12 pF250 MHz> -23 dB (800 MHz to 6.0 GHz)125 Mbps
Maximum Ratings
ESD (IEC61000-4-2 Contact Discharge)16 kV
ESD (Human Body Model MIL-STD-883)16 kV
Operating Temperature Range40 to 85 C
Storage Temperature65 to 150 C
Maximum Lead Temperature for Soldering260 C
Current per inductor30 mA
DC package power rating500 mW
Electrical Characteristics (TJ = 25C unless otherwise noted)
Maximum reverse Working Voltage (VRWM)5.0 V
Breakdown Voltage (VBR, Positive Clamp, IR = 1.0 mA)5.6 to 9.0 V
Breakdown Voltage (VBR, Negative Clamp, IR = 1.0 mA)1.5 to 0.04 V
Leak Current (IR, VRWM = 3.3 V)0.1 to 1.0 A
Resistance (RA)10
Diode Capacitance (C1, VR = 2.5 V, f = 1.0 MHz, 30 mVAC)12 pF
Line Capacitance (Ct)18.8 to 28.2 pF
Stop Band Attenuation23 dB from 800 MHz to 6.0 GHz

Applications

  • Wireless Handsets
  • EMI Filtering for LCD and Camera Data Lines
  • EMI Filtering and Protection for I/O Ports and Keypads

2409302136_onsemi-EMI7204MUTAG_C556436.pdf

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