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| Categories | Transistor, Photovoltaic Output Optoisolators |
|---|---|
| Rise time: | 6us@2mA,100Ω |
| Fall time: | 8us |
| Output Current: | 50mA |
| Vce Saturation(VCE(sat)): | 100mV@1mA,20mA |
| Operating Temperature: | -55℃~+110℃ |
| Load Voltage: | 35V |
| Reverse Voltage: | 6V |
| Current transfer ratio: | 130%;260% |
| Forward Current(If): | 60mA |
| Number of Channels: | 1 |
| Load Type: | Phototransistor |
| Input type: | DC |
| Isolation Voltage(Vrms): | 5kV |
| Description: | 50mA 100mV@1mA,20mA 35V 6V DC DIP-4 Transistor, Photovoltaic Output Optoisolators RoHS |
| Mfr. Part #: | CT817B-H |
| Model Number: | CT817B-H |
| Package: | DIP-4 |
| Company Info. |
| Beijing Silk Road Enterprise Management Services Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The CT817 Series is a DC input 4-pin phototransistor optocoupler designed for high isolation applications. It features a gallium arsenide infrared-emitting diode optically coupled to a phototransistor within a 4-lead DIP package, with various lead forming options available. This series offers high isolation voltage up to 5000 VRMS and a wide operating temperature range from -55 C to 110 C. It is suitable for applications such as switch mode power supplies, computer peripheral interfaces, and microprocessor system interfaces.
| Parameter | Rating | Unit | Notes |
|---|---|---|---|
| Absolute Maximum Ratings (at 25C) | |||
| Isolation Voltage (VISO) | 5000 | VRMS | |
| Total Power Dissipation (PTOT) | 200 | mW | |
| Operating Temperature (TOPR) | -55 ~ +110 | C | |
| Storage Temperature (TSTG) | -55 ~ +150 | C | |
| Soldering Temperature (TSOL) | 260 | C | |
| Emitter Characteristics | |||
| Forward Current (IF) | 60 | mA | |
| Peak Transient Current (IF(TRANS)) | 1 | A | (1s P.W, 300pps) |
| Reverse Voltage (VR) | 6 | V | |
| Emitter Power Dissipation (PD) | 100 | mW | |
| Detector Characteristics | |||
| Collector-Emitter Breakdown Voltage (BVCEO) | 35 | V | (IC= 100A) |
| Emitter-Collector Breakdown Voltage (BVECO) | 6 | V | (IE= 100A) |
| Collector Current (IC) | 50 | mA | |
| Detector Power Dissipation (PD) | 150 | mW | |
| Electrical Characteristics (TA = 25C unless otherwise specified) | |||
| Forward Voltage (VF) | - 1.24 1.4 | V | (IF=10mA) |
| Reverse Current (IR) | - - 5 | A | (VR = 6V) |
| Input Capacitance (CIN) | - 10 30 | pF | (f=1MHz) |
| Collector-Emitter Dark Current (ICEO) | - - 100 | nA | (VCE= 20V, IF=0mA) |
| Transfer Characteristics | |||
| Current Transfer Ratio (CTR) CT817 | 50 - 600 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817A | 80 - 160 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817B | 130 - 260 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817C | 200 - 400 | % | (IF= 5mA, VCE= 5V) |
| Current Transfer Ratio (CTR) CT817D | 300 - 600 | % | (IF= 5mA, VCE= 5V) |
| Collector-Emitter Saturation Voltage (VCE(SAT)) | - 0.1 0.2 | V | (IF= 20mA, IC= 1mA) |
| Isolation Resistance (RIO) | 5x1010 | (VIO= 500VDC) | |
| Isolation Capacitance (CIO) | - 0.25 1 | pF | (f=1MHz) |
| Switching Characteristics | |||
| Rise Time (tr) | - 6 18 | s | (IC= 2mA, VCE= 2V, RL= 100) |
| Fall Time (tf) | - 8 18 | s | (IC= 2mA, VCE= 2V, RL= 100) |
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