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| Categories | Single IGBTs |
|---|---|
| Td(off): | 245ns |
| Operating Temperature: | -40℃~+175℃@(Tj) |
| Td(on): | 58ns |
| Collector-Emitter Breakdown Voltage (Vces): | 650V |
| Input Capacitance(Cies): | 2.818nF@25V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic): | 4.8V@580uA |
| Gate Charge(Qg): | 219nC@40A,15V |
| Reverse Recovery Time(trr): | 80ns |
| Switching Energy(Eoff): | 350uJ |
| Turn-On Energy (Eon): | 1.15mJ |
| Description: | IGBT 650V 80A Through Hole TO-247 |
| Mfr. Part #: | SL40T65FL1 |
| Model Number: | SL40T65FL1 |
| Package: | TO-247 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Function: High-speed switching with low power loss.
Advantages: Features high input impedance, low VCE(sat), low Eoff, fast Trr, and a high maximum junction temperature.
Applications: Suitable for UPS, PFC, Welders, IH Cookers, and PV Inverters.
| Parameter | Symbol | Tests conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emmiter Voltage | BVCES | Ic=2mA,VGE=0V | 650 | - | - | V |
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0V, Tc=25 | - | - | 40 | A |
| Zero Gate Voltage Collector Current | ICES | VCE=650V,VGE=0V, Tc=175 | - | - | 1000 | A |
| Gate-body leakage current, forward | IGESF | VCE=0V,VGE=20V | - | - | 100 | nA |
| Gate-body leakage current, reverse | IGESR | VCE=0V,VGE=-20V | - | - | -100 | nA |
| Gate Threshold Voltage | VGE(th) | VCE=VGE,Ic=0.58mA | 4.8 | 5.8 | 6.8 | V |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V lc=40A Tc=25 | - | 1.95 | 2.4 | V |
| Collector-Emmiter saturation Voltage | VCESAT | VGE=15V lc=40A Tc=175 | - | 2.3 | - | V |
| Input capacitance | Cies | VCE=25V, VGE=0V, f=1.0MHZ | - | 2818 | - | pF |
| Output capacitance | Coes | VCE=25V, VGE=0V, f=1.0MHZ | - | 131 | - | pF |
| Reverse transfer capacitance | Cres | VCE=25V, VGE=0V, f=1.0MHZ | - | 209 | - | pF |
| Turn-on delay time | td(on) | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 58 | - | ns |
| Turn-On rise time | tr | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 54 | - | ns |
| Turn-Off delay time | td(off) | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 245 | - | ns |
| Turn-Off Fall time | tf | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 40 | - | ns |
| Turn-on Loss | Eon | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 1.15 | - | mJ |
| Turn-off Loss | Eoff | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 0.35 | - | mJ |
| Total Loss | Ets | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=25 | - | 1.50 | - | mJ |
| Turn-on delay time | td(on) | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 61 | - | ns |
| Turn-On rise time | tr | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 60 | - | ns |
| Turn-Off delay time | td(off) | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 260 | - | ns |
| Turn-Off Fall time | tf | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 38 | - | ns |
| Turn-on switching Loss | Eon | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 1.80 | - | mJ |
| Turn-off switching Loss | Eoff | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 0.38 | - | mJ |
| Total switching Loss | Ets | VCC=400V,Ic=40A, RG=7.9VGE=15V, Inductive Load Tc=175 | - | 2.18 | - | mJ |
| Gate Charge | Qg | VCE=520V,lc=40A VGE=15V | - | 219 | - | nC |
| Gate to Emitter Charge | Qge | VCE=520V,lc=40A VGE=15V | - | 26 | - | nC |
| Gate to Collector Charge | Qgc | VCE=520V,lc=40A VGE=15V | - | 115 | - | nC |
| Drain-Source Diode Forward Voltage | VF | IF=40A(TJ=25) | - | 1.3 | 1.9 | V |
| Diode Reverse recovery time | trr | IF=40A dlF=/dt=1000A/us TJ=25 | - | 80 | - | ns |
| Diode Reverse recovery charge | Qrr | IF=40A dlF=/dt=1000A/us TJ=25 | - | 1.0 | - | uC |
| Diode Reverse recovery Current | Irr | IF=40A dlF=/dt=1000A/us TJ=25 | - | 25 | - | A |
| Thermal Resistance,Junction to Case (IGBT) | Rth(j-c) | - | - | - | 0.4 | /W |
| Thermal Resistance,Junction to Case (Diode) | Rth(j-c) | - | - | - | 1.2 | /W |
| Thermal Resistance,Junction to Ambient | Rth(j-A) | - | - | - | 40 | /W |
| Absolute Ratings | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emmiter Voltage | Vce | 650 | V |
| Collector Current-continuous (T=25) | IC | 80 | A |
| Collector Current-continuous (T=100) | IC | 40 | A |
| Diode forward current (T=25) | IF | 80 | A |
| Diode forward current (Tc=100) | IF | 40 | A |
| Collector Current-pulse (note 1) | ICM | 160 | A |
| Gate-EMMiter Voltage | VGES | 30 | V |
| Power Dissipation (Tc=25) | PD | 375 | W |
| Power Dissipation (Tc=100) | PD | 188 | W |
| Operating Temperature Range | TJ | -40~+175 | |
| Storage Temperature Range | TSTG | -55~+150 | |
| Short Circuit Withstand Time | tsc | 5 | us |
| Maximum Lead Temperature for Soldering Purposes | TL | 300 |
|
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