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Slkor SL15T120FL1

Categories Single IGBTs
Pd - Power Dissipation: 238W
Td(off): 52ns
Td(on): 10ns
Operating Temperature: -40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces): 1.2kV
Input Capacitance(Cies): 1.26nF@25V
IGBT Type: FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4.5V@250uA
Gate Charge(Qg): 112nC@15V
Reverse Recovery Time(trr): 283ns
Switching Energy(Eoff): 670uJ
Turn-On Energy (Eon): 380uJ
Description: IGBT FS (Field Stop) 1.2kV 30A 238W Through Hole TO-247
Mfr. Part #: SL15T120FL1
Model Number: SL15T120FL1
Package: TO-247
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Slkor SL15T120FL1

Product Overview

The SL15T120FL1 is a high-performance component featuring Trench FS Technology and ROHS compliance. It is designed for general-purpose inverters, induction heating (IH), and UPS applications. Key advantages include low gate charge.

Brand

SLKOR

Technology

Trench FS Technology

Certifications

ROHS

ParameterSymbolTests conditionsMinTypMaxUnits
Collector-Emitter VoltageVces1200V
Collector Current-continuousIcT=25C30A
Collector Current-continuousIcT=100C15A
Collector Current-pulseIcm(note 1)45A
Diode Continuous forward currentIfT=25C30A
Diode Continuous forward currentIfT=100C15A
Diode Maximum Forward CurrentIfm(Note 1)45A
Gate-Emitter VoltageVees120V
Power Dissipation (TO-247)PdTc=25C238W
Operating Temperature RangeTj-40175C
Storage Temperature RangeTsta-55150C
Maximum Lead Temperature for Soldering PurposesTl300C
Collector-Emitter VoltageBVcesIc=250A,Vge=0V1200--V
Zero Gate Voltage Collector CurrentIcesVge=1200V,Vee=0V, Tc=25C-100A
Collector CurrentIcesTc=100C-2mA
Gate-Body leakage current, reverseI GBOVce=0V,Vge=-20V--150nA
Gate-Emitter Threshold VoltageVGE(th)Vce=Vge, Ic=250A5-6.5V
Collector-Emitter saturation VoltageVCE(SAT)Vge=15V,Ic=15A, Tc=25C1.161.21V
Collector-Emitter saturation VoltageVCE(SAT)Tc=125C-1.9V
Collector-Emitter saturation VoltageVCE(SAT)Tc=150C-2.1V
Input capacitanceCies-1260-pF
Output capacitanceCoesVce=25V, Vge=0V, f=1.0MHz-78-F
Reverse transfer capacitanceCres-11.4-pF
Total Gate ChargeQgVcc=960V, Ic=15A-12-nC
Gate to emitter chargeQgeVge=15V-3.68.8nC
Gate to collector chargeQgc-80.7-nC
Turn-On delay timetd(on)-10-ns
Turn-On rise timetr-34-ns
Turn-off delay timetd(off)Vee=600V,Ic=15A, Re=10, Inductive-52-ns
Turn-off Fall timetf-174-ns
Turn-on energyEonload Tc=25C-0.38-mJ
Turn-off energyEoff-0.67-mJ
Total switching EnergyEtot-1.05-mJ
Diode Forward VoltageVsdVce=0V, If=15A-1.85/2.2-V
Diode Reverse recovery timetrrVee=0V, Vr=600V, If=15A-283-ns
Reverse recovery chargeQrrdIr/dt=450A/s-180-nC
SymbolParameterTypeUnits
RthJCThermal Resistance, Junction to case0.63C/W
RthJ-AThermal Resistance, Junction to Ambient40C/W

2409302232_Slkor-SL15T120FL1_C20539702.pdf
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