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All Relays wholesalers & Relays manufacturers come from members. We doesn't provide Relays products or service, please contact them directly and verify their companies info carefully.
| Total 6651 products from Relays Manufactures & Suppliers |
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Place of Origin:Original IRFBC40SPBF Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW18NM60ND Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP26NM60ND Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TK17N65W,S1F Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 900... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP18NM60ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHB21N65EF-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRFPE30PBF Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP28NM60ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TK28N65W,S1F Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 27.6A (Ta) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 1.... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW15NM60ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW54NM65ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original PMV450ENEAR Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 800mA (Ta) Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.7V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW26NM60ND Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW28NM60ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IPW65R099C6FKSA1 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 3.5V @ 1.... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRG7PH35UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A Power - Max 180W Switching ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRG4PH50KDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 45A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 24A Power - Max 200W Switching Energy... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRG4RC10SDTRPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 14A Current - Collector Pulsed (Icm) 18A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 8A Power - Max 38W Switching Energy ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original IRG4PC30WPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 100W Switching Energy ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original HGTG5N120BND Specifications Part Status Not For New Designs IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 21A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Power - Max 167W ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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