transistor power

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:CANYI

Model Number:3N80

Place of Origin:Guangdong, China

... Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:onsemi

Model Number:NTGS4141NT1G

Place of Origin:original

NTGS4141NT1G MOSFET Power Electronics Transistor Power Single N-Channel TSOP-6 30 V 7.0 A FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min...

Brand Name:FLEXEM

Model Number:FL2N-40MR

Place of Origin:Shenzhen

... power output x16, or transistor power output x8+relay outputx8. Digital Input 24 High-level input x4,general input x20,supporting source/drain type Analog Input N/A Digital Output 16 NPN transistor power output x16, or PNP transistor power output x16, or

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

...Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power...

Place of Origin:USA

Brand Name:IR

Model Number:IRGP4063DPBF

Field Effect Transistor IRGP4063DPBF NEW AND ORIGINAL STOCK [Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic ...

Brand Name:STMicroelectronics

Model Number:IPB017N10N5

Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics Ideal for hot-swap and e-fuse applications Very low...

Place of Origin:Guangdong, China

Brand Name:CHEEBO Technology

Model Number:CBMN8-5036

... Tool/High Power/ power station battery/electric motorcycle/electric vehicle, and can be used in conjunction with the lithium battery pack production line. ● This lithium battery ...

Model Number:IMD16AT108

... dissipation. This component is suitable for various power management applications. Product Attributes Brand: ROHM Package Type: SMT6 Marking Code: D16 Basic Ordering Unit: ...

Place of Origin:US

Brand Name:Original

Model Number:IRFP4710PBF, IRFP460PBF

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 ...

Brand Name:XWELL

Model Number:MD-ADW

Place of Origin:China

8000A Transistor Power Supply Single Sided Automatic Battery Spot Welding Machine With PC Products Description MD-ADW is suitable for battery pack spot welding and assembly in the factory for 14500 / 18650 / 21700 / 26650 / 32700/33140 multi-parallel multi...

Model Number:D40N15

Place of Origin:United States

Brand Name:Original

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Brand Name:first class

Model Number:medium frequency

Place of Origin:china

...of power consumption higher than thyristor serial-connected one because it rejects current-limiting inductor inside thyristor-inverting melting furnace. Compared with thyristor, IGBT transistor can not only control conduction, but also control its turn-off

Brand Name:Toshiba

Model Number:TK100E06N1,S1X

Place of Origin:JAPAN

Product Description: TK100E06N1,S1X Power IC Chip is a high-performance, high-reliability TO-220-3 package semiconductor device designed to provide optimal performance and reliability for Power IC applications. It is manufactured by Toshiba, a leading ...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Model Number:D1005UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D1005UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D1005UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:Toshiba

Model Number:2SC5200

Place of Origin:Original

...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor...