sot89 npn medium power transistors

Model Number:BC868,115

... (SMD) in plastic packages. These transistors offer high current capabilities, multiple current gain selections, and high power dissipation. Key features include an exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) and a

Brand Name:CJ

Model Number:BCX56-10

Place of Origin:CN

BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ...

Brand Name:Anterwell

Model Number:BCX56

Place of Origin:original factory

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ...

Model Number:BCX56

Place of Origin:original factory

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ...

Place of Origin:MALAYSIA

Brand Name:ERICSSON

Model Number:PTB32001X

PTB32001X is a NPN microwave power transistor . Part NO: PTB32001X Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview ...

Categories:RF Transistors

Country/Region:china

... Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits whe...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:D882S

TO-92 Plastic-Encapsulate Transistors D882S TRANSISTOR (NPN) FEATURE Power dissipation MARKING D882=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE, ...

Brand Name:CANYI

Model Number:2222A

Place of Origin:Guangdong, China

MPS2222A MPS2222 2222A TO-92 NPN mosfet power transistor Choose Canyi to get more benefit: Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi Competitive price and save your time Over 10 ...

Place of Origin:US

Brand Name:Original

Model Number:TIP41C

... Transistor Type NPN Current - Collector (Ic) (Max) 6A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A, 4V Power - ...

Place of Origin:Original

Brand Name:Original

Model Number:2SD882

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Model Number:FQP6N60C

Place of Origin:United States

Brand Name:Original

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Model Number:PBSS4160T,215

Place of Origin:CN

...NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:D882

TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound device, if none, the normal device XX=Code ...

Brand Name:Original

Model Number:PXT8050

Place of Origin:Original of place

Mosfet power transistor PXT8050 transistor (NPN) SOT-89-3L SMD Model number PXT8050 D/ C Newest Brand Original Package type Surface Mount Service ...

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Brand Name:Huixin

Model Number:MMDT3946DW SOT-363

Place of Origin:China

... Planar Die Construction Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage ...

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...

Brand Name:onsemi

Model Number:NJVMJD31CT4G

Place of Origin:CN

NJVMJD31CT4G Bipolar Transistors - BJT 3.0 A, 100 V NPN Bipolar Power Transistor Features Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves (“1" Suffix) Lead ...