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All sic mosfet igbt 6n channel wholesalers & sic mosfet igbt 6n channel manufacturers come from members. We doesn't provide sic mosfet igbt 6n channel products or service, please contact them directly and verify their companies info carefully.
| Total 42 products from sic mosfet igbt 6n channel Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:FS03MR12A6MA1BBPSA1 Place of Origin:CN IGBT Modules FS03MR12A6MA1BBPSA1 Mosfet Array 6N Channel 3 Phase Bridge Detailed Description Of FS03MR12A6MA1BBPSA1 FS03MR12A6MA1BBPSA1 is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles.The power module implements the new CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications. Product Attributes Of FS03MR12A6MA1BBPSA1 Part Number: FS03MR12A6MA1BBPSA1 FET Type: 6 N-Channel... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Shareway Model Number:750319331 Place of Origin:Guangdong China ... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ... |
SHAREWAY TECHNOLOGY CO., LTD.
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Brand Name:Mersen Model Number:NH1GG69V125P Place of Origin:China NH1GG69V125P 1250V 69A SiC MOSFET Module Low Rds(on) 11mΩ Fast Switching High Frequency High Temp 175°C Low Loss Industrial Grade For Solar and Industrial Drives Features Dimensions according to DIN 43 620 Parts 1 to 4 Lead free contact blades 0% cadmium ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New ... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:NVTFS4C02N ...MOSFET NVTFS4C02N MOSFET Single N-Channel Power N-Channel µ8FL 30V 162A 2.25 mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:JUYI Model Number:JY213H Place of Origin:China ...h three independent high and low side referenced output channels DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:Anterwell Model Number:ISL9V3040S3ST Place of Origin:original factory ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT General Description The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New ... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:JEUNKEI Model Number:JY213H Place of Origin:China Descriptions: The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown... |
Changzhou Junqi International Trade Co.,Ltd
Jiangsu |
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Brand Name:Cersol Place of Origin:China Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ... |
Zhuhai Cersol Technology Co, Ltd
Guangdong |
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Model Number:UF3C065080K3S ... gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO247-3 package, this device offers ultra-low gate charge and exceptional reverse recovery, making it |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Brand Name:Infineon Technologies Model Number:IMBG120R350M1HXTMA1 ... Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The ... |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Brand Name:TI Model Number:ULN2003V12PWR Place of Origin:CN ... 5.7kVrms 4A/6A Dual-channel Isolated Gate Driver Product Overview The UCC21521 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class ... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:zmkj Model Number:4inch--semi high purity Place of Origin:china ...sic wafer,4H High Purity Silicon Carbide Substrates,high purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor, 4inch SiC substrates ,Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC... |
SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai |
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Brand Name:WINNER Model Number:WNE T6 Place of Origin:CHINA Top Grade Aluminum Alloy Bonding Wire 6N High Purity for Reliable Packaging of Power Semiconductors like MOSFET IGBT etc * Our high quality welding wire is meticulously crafted from 6N high purity aluminum material. This top grade aluminum forms the core... |
SICHUAN WINNER SPECIAL ELECTRONIC MATERIALS CO., LTD.
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E Quick Detail: N-CHANNEL SILICON POWER MOSFET Description: N-CHANNEL SILICON POWER MOSFET Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Applications: Maintains both low power loss and low noise Lower RDS(on) characteristic More ... |
Mega Source Elec.Limited
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Brand Name:Power Integrations Model Number:2SC0435T2G1-17 Place of Origin:TH Dua Channel IGBT Driver SCALETM-2+IGBT and MOSFET Driver Core Q1. What is your terms of packing? A: Generally, we pack our goods in neutral white boxes and brown cartons. If you have legally registered patent, we can pack the goods in your branded boxes... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Model Number:IR2130STRPBF Brand Name:Original Place of Origin:US ... Packaging Tape & Reel (TR) Part Status Active Driven Configuration Half-Bridge Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10 V ~ 20 V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Infineon Technologies Model Number:IPB044N15N5ATMA1 Place of Origin:Germany ... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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