sd57060 01 power mosfet transistor

Place of Origin:Original

SD57060-01 Specifications Part Status Active Transistor Type LDMOS Frequency 945MHz Gain 15dB Voltage - Test 28V Current Rating 7A Noise Figure - Current - Test 100mA Power - Output 60W Voltage - Rated 65V Package / Case M250 Supplier Device Package M250 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. SD57060-01...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:Vishay / Siliconix

Model Number:IRFP460LC

...power your electronic devices, then the IRFP460LC Power MOSFET might be just what you need. This high-performance transistor is ideal for use in a broad range of applications, from audio amplifiers to motor control circuits. Here are some pros and cons to

Brand Name:onsemi

Model Number:FDD3672

Place of Origin:original

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (...

Brand Name:STMICROELECTRONICS

Model Number:VND3NV0413TR

Place of Origin:China

... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...

Brand Name:Original Factory

Model Number:IXTH24N50L

Place of Origin:CN

... Operation, the package is TO-247 (IXTH). Specification Of IXTH24N50L Part Number IXTH24N50L FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive ...

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 RT2528L RALNK RT5501WSC RICHTEK 　 IRG4RC20FTR IR RF071M2STR ROHM...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD57060-01

... to the data sheet, such as PDF files Docx documents, etc. We have SD57060-01 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF MOSFET Transistors

Country/Region:china

... Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Model Number:VRF2933

Place of Origin:Malaysia

Brand Name:KAIGENG

VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...

Model Number:FDPC5018SG

Place of Origin:America

Brand Name:ON

... Mount Power Clip 56 MOSFET 2N-CH 30V PWRCLIP56 Trans MOSFET N-CH 30V 17A/32A 8-Pin PQFN EP T/R Bom Service One- Stop Electronic Components BOM List Kitting Service IC Diode Transistor Capacitor Resistor Inductors Connectors Matching 1.

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 100 mA 945MHz 15dB 60W M250

Model Number:SD57060-01

RF Mosfet 28 V 100 mA 945MHz 15dB 60W M250

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...