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All sd57045 01 power mosfet wholesalers & sd57045 01 power mosfet manufacturers come from members. We doesn't provide sd57045 01 power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 706 products from sd57045 01 power mosfet Manufactures & Suppliers |
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Model Number:SD57045-01 ... to the data sheet, such as PDF files Docx documents, etc. We have SD57045-01 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ... |
Rozee Electronics Co., Ltd
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Categories:RF MOSFET Transistors Country/Region:china The SD57045-01,from STMicroelectronics,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Model Number:SD57045-01 RF Mosfet 28 V 250 mA 945MHz 15dB 45W M250 |
Beijing Silk Road Enterprise Management Services Co.,Ltd.
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Model Number:YBN070PKH-Q1 NT Brand Name:YZY Place of Origin:Guangdong,China YBN070PKH‑Q1 NT 7 Inch IPS HDMI Display Monitor 1024*600 IPS Screen · MicroUSB 5V Power · 3.5mm Audio Output Product Overview YBN070PKH‑Q1 NT is a 7‑inch IPS HDMI display module with 1024*600 high‑definition resolution, featuring wide viewing angle and ... |
Shenzhen YZY Technology Co., Ltd
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Model Number:3500/40M-01-00 140734-01 Brand Name:Bently Nevada Place of Origin:USA 3500/40M-01-00 140734-01 Bently Nevada Key Features Input Signal: 1–4 eddy current probe signals Power Consumption: Typically 7.7 W Input Impedance: Standard I/O: 10 kΩ Probe Power Supply: -24 Vdc Buffered Output: 1 coaxial connector per channel, short-... |
Joyoung International Trading Co.,Ltd
Fujian |
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Brand Name:HT Model Number:F4N65L TO-220F-3L Place of Origin:China ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Place of Origin:America Brand Name:IXYS Model Number:VMK165-007T ...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power... |
Mega Source Elec.Limited
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Model Number:IRF640NPBF Place of Origin:original factory ...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:JUYI Model Number:JY09M Place of Origin:China ... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Model Number:HR-350N Brand Name:JunSheng Place of Origin:China ... program touch screen controls ribbon length, automatic cutting and twisting Bundle diameter 1-20MM (ODM available), bundled power ≥ 20N, tolerance ≤ 0.01, working speed 1.3pc/s Suitable for |
Shenzhen Junsheng Automation Equipment Co.,Ltd
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Brand Name:Original Factory Model Number:SCTWA50N120 Place of Origin:CN 1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:IPT020N10N5ATMA1 Place of Origin:China Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET... |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
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Brand Name:Infineon Model Number:IRF7351TRPBF Place of Origin:China ...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power... |
TOP Electronic Industry Co., Ltd.
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Model Number:ACPL-339J-000E ...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power... |
Beijing Silk Road Enterprise Management Services Co., Ltd.
Beijing |
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Brand Name:JUYI Model Number:JY21L Place of Origin:China ... Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs... |
Changzhou Bextreme Shell Motor Technology Co.,Ltd
Jiangsu |
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRLR3915TRPBF ... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |