rf power transistors high power

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

Brand Name:Hua Xuan Yang

Model Number:15P03C2

Place of Origin:ShenZhen China

...Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V GS =-10V R DS(ON) = 6.8mΩ(typ.) @V GS =-4.5V Reliable and Rugged Halogen Free Devices Available (RoHS Compliant) Mosfet Power Transistor Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

...High Power RF Power Amplifier 50dBm Gain LAN 2kg Weight ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Parameters: Frequency Range 500-2400MHz Gain ≥50dB Small Signal Gain Flatness ≤4dB Power...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401...

Model Number:MMBT5401

...high diode semiconductor transistor in a SOT-23 package. It is ideal for medium power amplification and switching applications. This NPN transistor is complementary to the MMBT5551.Product Attributes Brand: High Diode Semiconductor Package Type: SOT-23 Transistor Type: NPN Classification: Plastic-Encapsulate Transistors...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Kimghz technology

Model Number:KH-42S10T

Place of Origin:Original/CHINA

...High-Performance Video Transmitter Professional-grade wireless video transmitter delivering reliable signal transmission with adjustable power output and wide frequency range for diverse applications. Technical Specifications Brand Name Kimghz technology Model Number KH-42S10T Origin China Frequency 4.2GHz Power Output 8-10W (200mW, 400mW, 1W, 4W, 8-10W) Channel 15CH Power...

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor...

Categories:RF Transistors

Country/Region:china

...RF MOSFET Transistors Trans MOSFET N-CH 65V 32A 3-Pin Manufacturer: Ampleon Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 32 A Vds - Drain-Source Breakdown Voltage: 65 V Rds On - Drain-Source Resistance: 100 mOhms Operating Frequency: 700 MHz to 1 GHz Gain: 21 dB Output Power...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Brand Name:onsemi

Model Number:SGL160N60UFD

Place of Origin:Original Factory

...Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features • High speed switching • Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A • High...

Brand Name:Hincn

Model Number:HCTD-4055-2

Place of Origin:China

..., no damage to the power amplifier even during open circuit or short circuit. Specifications Model number: HCTD-4055-2 Product name: TDD 2*2W Dual Channel Digital Linear RF Power Amplifier 1420～1530M MIMO PA High linearity Number of channels: 2

Brand Name:Keysight (Agilent)

Model Number:8481A

Place of Origin:USA

...RF Power Sensor -60 to 20 dBm 10 MHz-18 GHz Plug-In Form Factor Product Overview The Keysight (Agilent) 8481A is a high-performance RF power sensor operating from 10 MHz to 18 GHz with a measurement range of -30 to +20 dBm. This plug-in form factor sensor features excellent SWR for reduced mismatch uncertainty and provides accurate average power...