rf power mosfet transistor

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF151G

MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:TeXin

Model Number:TX-50W

Place of Origin:Shenzhen China

.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects.

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM900-50W

Place of Origin:China

... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ...

Brand Name:SHINHOM

Model Number:RFPA Power amplifier

Place of Origin:China

RF Power Amplifier Module for High Power and Wideband Signal Transmission The RF Power Amplifier Module is engineered for high-performance signal amplification in RF and microwave systems. It delivers high output power, stable gain, and efficient operation...

Categories:RF Cable Assemblies

Country/Region:china

... loss(dB) ≤0.2 ≤0.3 ≤0.4 Splitting loss (dB) ≤3 ≤4.8 ≤6 VSWR ≤1.25 Maximum power (W) 200 Third-order intermodulation(2×20W) ≤-140dBc Characteristic Impedance(Ω) 50 Interface Type Type N Female (NF) Ambient Temperature -...

Brand Name:Wisdom

Model Number:RF-GL2T3

Place of Origin:China

... 3A Max. Output Frequency 3MHz Working Temperature 0~45 Degree Humidity ≤85% Working Theory The working principle of RF treatment is a thermal effect principle. It uses electromagnetic waves to quickly rub water molecules in

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...

Brand Name:Texas Instruments

Model Number:TPS62141RGTR

Place of Origin:N/S

...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power...

Brand Name:Infineon Technologies

Model Number:SPW47N60C3

Place of Origin:China

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy...

Brand Name:poney

Model Number:MIG 160SNY

Place of Origin:CHINA

...power input 220V 50/60HZ Input capacity 5.5kva no load voltage 56V welding current 20-160A electrode rod 1.6-4.0MM wire diameter 0.8/1.0MM duty cycle 60% weight 13.0KG Features 1. single phase 220v 2. powerful IGBT transistor 3. effortless one touch setup, easy adjustment and ...

Place of Origin:Beijing ,China

Brand Name:Nubway

Model Number:V700

High frequency spider vein laser high rf power for spider veins Product Description Detail technical parameter below : Type 30Mhz RF high frequency Input voltage AC 220V,AC 110V Input power 150W Output energy 0~100J adjustable Needle material medical use ...

Brand Name:wolvesteam

Model Number:JM166707

Place of Origin:China

Portable Cell Phone Jammer (Middle RF power jammer + Handbag design) Product Description: This is a small RF power cell phone jammer with handbag design. The jammer is designed to protect VIP person or special agent. It is developed on explicit requests...

Brand Name:RY

Model Number:RY-051002

Place of Origin:China

...used for RF signal power detection, with a detection frequency range of 0.1-2.4GHz. It can detect a RF signal with a power range of -72dBm to -2dBm, and convert such RF signal into a DC voltage output. The larger the amplitude or power of the RF signal...