rf devices gallium nitride wafer

Brand Name:zmkj

Model Number:GaN-FS-SIN-D-C50-SSP 2inch

Place of Origin:CHINA

...wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride

Brand Name:zmkj

Model Number:GaN-4INCH

Place of Origin:CHINA

... several types of devices; the primary GaN devices are LEDs, laser diodes, power electronics, and RF devices. GaN is ideal for LEDs because of the direct bandgap of 3.4 eV which is in the near UV spectrum. GaN can be alloyed with InN and AlN, which have

Place of Origin:CN

Brand Name:Original Factory

Model Number:CGH40010F

CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Brand Name:PAM-XIAMEN

Place of Origin:China

...gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire substrates. PAM-XIAMEN’s Template Products enable 20-50% shorter epitaxy cycle times and higher quality epitaxial device layers, with better structural quality and

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire substrate production. Heat Exchanger Method (HEM) - ...

Brand Name:INNOTION

Model Number:YP601238T

Place of Origin:Jiangsu, China

INNOTION 7W 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) ...

Brand Name:BonTek

Model Number:Langasite Wafers

Place of Origin:China

Lanthanum Gallium Silicate Langasite Wafers Piezoelectric Crystal For BAW And SAW Devices Lanthanum Gallium Silicate (Langasite-LGS) is promising new and excellent piezoelectric crystal for BAW and SAW devices due to its excellent spectroscopic and ...

Brand Name:VBE

Model Number:VBE6003H

Place of Origin:CHINA

Brand Name:Vizz

Model Number:PD38

Place of Origin:China

Mini PD QC Fast Charging 65W GaN Wall Charger EU Plus Universal Charger Products Features 1, The macebook will be changed full about 90 minuties 2, High efficiency charging& Low heat dissapation 3, Smaller size, only want 35. 7* 35. 7* 52mm 4, Full ...

Brand Name:HMT

Model Number:6 inch

Place of Origin:CHINA

...wafer HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance. Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices...

Brand Name:Analog Devices Inc.

Model Number:HMC199MS8ETR

Place of Origin:Multi-origin

HMC199MS8ETR RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high ...

Brand Name:MYT

Model Number:433Mhz 20W GaN Anti Drone Module

Place of Origin:China

...RF Power Amplifier High-performance RF power amplifier module designed for anti-drone systems and FPV defense applications. This GaN-based module delivers 20W output power at 433MHz frequency for effective drone countermeasures. Key Features 433MHz frequency operation (428-438MHz range) 20W output power capability GaN (Gallium Nitride...

Brand Name:Qorvo

Model Number:QPA2933

... power and 28dB of large-signal gain while achieving 62% power-added efficiency. The QPA2933 is fabricated on a 0.25µm QGaN25 GaN (Gallium Nitride) on SiC (Silicon Carbide) process and can support a variety of operating conditions to

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

...circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer (

Brand Name:ANENPOWER

Model Number:APSG330D

Place of Origin:Shenzhen

330W Max GaN Desktop AC/DC Adapter: Ultra-Efficient High-Power Solution Product Overview The 330W GaN Desktop AC/DC Adapter stands at the absolute pinnacle of high-wattage power engineering. By utilizing next-generation Gallium Nitride (GaN) technology...

Categories:Analog Devices ADI

Country/Region:china

The HMC349AMS8GE is a gallium arsenide (GaAs), pseudo - morphic high electron mobility transistor (PHEMT), single - pole, double - throw (SPDT) switc. Functions Frequency Range: It is specified for operation from 100 MHz to 4 GHz. Impedance Design: ...

Brand Name:JIZHONG

Model Number:JZORH1000-1BIX

Place of Origin:CHINA

...RF Output FTTH CATV Optical Receiver Mini Node With Power Adapter for Fiber Optic FTTH Feature JZORH-210W is an optical receiver with low power consumption and low power reception with aluminum shell. High sensitivity PIN photo-diode.High index full-imported gallium arsenic MMIC device are selected for RF...

Brand Name:HUANSHUN

Model Number:GS8640S 1×106

Place of Origin:CHINA

... receiving device designed to adapt to optical passive (PON) access network fiber to building (FTTB). It adopts high-sensitivity photocell, GaAs cadmium for low noise amplification, arsenic gallium push-pull amplification for the final stage, RF single-...

Brand Name:kimghz technology

Model Number:KH-PAC150W

Place of Origin:Original/CHINA

... Module is specially designed to disrupt and neutralize drone signals across a broad frequency spectrum. Adopting Class AB Gallium Nitride (GaN) technology, this module delivers high-power RF amplification, producing targeted directional signals

Brand Name:LDSK

Place of Origin:Guangdong, China

... start-up, supports multi-band coverage and multi-power level output, strong compatibility, easy to integrate into various terminal devices. Supporting a wide operating voltage range, the module is housed in a