ptfa081501f v1 power mosfet

Model Number:PTFA081501F V1

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFA081501F V1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Model Number:PTFA081501F V1

RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-31248-2

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 950 mA 900MHz 18dB 150W H-31248-2

Model Number:GM4N60GT

...MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is suitable for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.Product Attributes Brand: GREENMICRO Product Model: 4N60 Revision: V1

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDI045N10A

High Power MOSFET FDI045N10A N-Channel PowerTrench^® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Model Number:IRF640NPBF

Place of Origin:original factory

...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:ABB

Model Number:UNS 0882A-P,V1

Place of Origin:Switzerland

Product:ABB UNS 0882A-P,V1 Power Signal Interface UNS 0882A-P,V1 in original packing AC800M series module, industrial robot spare parts DSQC series, Bailey INFI 90,800xA, Advant ...

Brand Name:Original Factory

Model Number:SCTWA50N120

Place of Origin:CN

1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power...

Model Number:ACPL-339J-000E

...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power...

Brand Name:JUYI

Model Number:JY21L

Place of Origin:China

... Description The product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operates up to 150V. Logic inputs...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRLR3915TRPBF

... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are