press fit igbt module with low vce sat

Brand Name:FUJI Electric

Model Number:2MB1150U4A-120-50

Place of Origin:China

...IGBT Module Ultra-Low Vce(sat) High Short Circuit Ruggedness Low Loss Press-Fit Technology For Industrial Drives and Mega UPS Features Power Integrated Module (PIM) 1200V / 50A Rating Integrated Functions: 3-Phase Rectifier, 3-Phase Inverter, Brake Chopper Low Vce(sat) IGBTs and Low Vf Diodes (Low...

Brand Name:Infineon Technologies

Model Number:IRGP4068DPBF

Place of Origin:original

...IGBT Power Module with Low VCE(sat) and Low EMI Product: IRGP4068DPBF IGBT Power Module Features: - 600V/68A N-channel IGBT Power Module - Low saturation voltage - High speed switching - High power density - Low switching losses - Built-in fast recovery anti-parallel diode - Low...

Brand Name:STANDAR

Model Number:7MBR75UB120-50

Place of Origin:100% new & original

IGBT MODULE (U series) 1200V / 75A / PIM Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Item Symbol Condition C Characteristics Max. Unit Thermal resistance ( 1 device ) Rth(j-c) Inverter IGBT - - 0.45 °C/W Inverter FWD - - 0.73 Brake IGBT...

Model Number:MG150HF12TFC2

...IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10us), and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts a low...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NUS5530MN

... years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has

Brand Name:Original Factory

Model Number:FP75R12N2T4BPSA1

Place of Origin:CN

...IGBT Module Trench Field Stop 1200V 75A Chassis Mount Product Description Of FP75R12N2T4BPSA1 FP75R12N2T4BPSA1 feature low inductive design, low switching losses, and low VCE(sat). ​Specification Of FP75R12N2T4BPSA1 Part Number FP75R12N2T4BPSA1 Power - Max 20 mW Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A Current - Collector Cutoff (Max) 1 mA Input Capacitance (Cies) @ Vce 4.3 nF @ 25 V Features Of Automotive IGBT Modules...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG400J2YS40

...IGBT Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) • The electrodes are isolated from case. • Low thermal resistance • VCE (sat...

Brand Name:STARPOWER

Model Number:GD150HFL120C2S

Place of Origin:China

...IGBT POWER Module GD150HFL120C2S GD200HFL120C8S Molding Type Module Molding Type Module 1200V/200A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) SPT+ IGBT technology 10μs short circuit capability VCE(sat) with positive temperature coefficient Low

Brand Name:Fuji Electric

Model Number:2MBI450VX-120-50

Place of Origin:JAPAN

IGBT Power Modules 2MBI450VX-120-50 1200V 450A 2-in-1 package Features Low VCE(sat) Low Inductance Module structure Solderless press-fit terminals Applications Inverter for Motor Drives, AC and DC Servo Drives Uninterruptible Power Supply Systems, Wind ...

Brand Name:ON

Model Number:FGL40N120AND

Place of Origin:USA

FGL40N120AND 40A 1200V Welding Machine IGBT Single Tube NPT TO-264 Features • High speed switching • Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A • High input impedance • CO-PAK, IGBT with FRD : trr = 75ns (typ.) Applications Induction Heating...

Brand Name:Fairchild/ON

Model Number:FGH60N60SMD

Place of Origin:CN

FGH60N60SMD 600V 60A Field Stop IGBT Power Transistor Features • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for easy parallel operating • High current capability • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A • ...

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ...

Brand Name:Mitsubishi

Model Number:CM300HA-24H

Place of Origin:Japan

...IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys tem assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat...