p channel trench mosfet transistor

Brand Name:Original Factory

Model Number:PMDXB600UNE

Place of Origin:CN

... ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Specification Of PMDXB600UNE Product Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss)

Brand Name:N-X-P Semiconductors

Model Number:PMCXB900UE

Place of Origin:USA

... Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 600 mA, 500 mA Rds On - ...

Brand Name:original

Model Number:NX7002AK,215

...Channel Trench MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. Very Fast Switching ESD Protection Upto 1.5kV MOSFET N-CH 60V 190MA TO236AB Trans MOSFET...

Brand Name:Anterwell

Model Number:2SK3561

Place of Origin:original factory

N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) • High forward ...

Place of Origin:US

Brand Name:Original

Model Number:SPP20N60C3

Product Detail Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) Drive ...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Brand Name:NEXPERIA

Model Number:PMPB11EN

Place of Origin:NEXPERIA

...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: DFN-2020-6 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 13 A Rds On - Drain-Source Resistance: ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:WSP4012

... and Green Product requirement 100% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVJD4152P

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting.

Brand Name:ON Semiconductor

Model Number:FDMC510P

Place of Origin:CHINA

...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel Technology MOSFET...

Brand Name:onsemi

Model Number:NVMFS5C670NWFT1G

Place of Origin:Multi-origin

FDMS86350 - N-Channel Automotive MOSFET The FDMS86350 is an N-channel Power Trench® MOSFET designed for automotive applications. It offers high current capability and low on-resistance. It is designed for use in switching applications such as automotive DC...

Brand Name:Infineon Technologies IR

Model Number:IRFS3207ZTRRPBF

... MOSFET MOSFT 75V 170A 4.1mOhm 120nC App Characteristics Features High Efficiency Synchronous Rectification in SMPS Uninterruptible Power ...

Brand Name:DEC

Model Number:MXN3312

Place of Origin:Jiangxi, China

MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet Product Description The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. ...

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: ...

Brand Name:Infineon Technologies

Model Number:IRF640NPBF

...perfect choice for you. This high-performance N-channel enhancement-mode transistor is designed to deliver excellent performance with its low on-state resistance of just 0.18 ohms. This MOSFET is capable of handling a maximum current of 18 amperes, which

Brand Name:STM

Model Number:STF5NK100Z

Place of Origin:Original

N-Channel 1000V Mosfet STF5NK100Z Switching Application 3.5A 100V 3.7Ohm Power MOSFET Applications Switching application Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip ...

Brand Name:Original

Model Number:IRLML6244TRPBF

Place of Origin:Original

MOSFET IRLML6244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET MOSFT 20V 6.3A 21mOhm 2.5V cpbl PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Brand Name:JUYI

Model Number:JY2504NPM

Place of Origin:China

... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/...

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor