npn amplifier high voltage transistor

Brand Name:Original

Model Number:MMBT5551

...NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor

Model Number:LMBT6517LT1G

Product Overview The LMBT6517LT1G/LT3G series are NPN Silicon High Voltage Transistors in a SOT-23 package, designed for various electronic applications. These transistors offer high voltage capabilities and are compliant with RoHS requirements.Product ...

Brand Name:Original

Model Number:MMBT5551

2N5551 / MMBT5551 NPN通用放大器MMBT5550LT1高压晶体管NPN硅 SOT-23 - Power Transistor and DarliCM GROUPons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T ...

Place of Origin:PHILIPPINE

Brand Name:MOT

Model Number:MRF571

... plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost. . Applications: • High Gain–Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA • Low Noise Figure NFmin = 1.6 dB (Typ)

Brand Name:Hua Xuan Yang

Model Number:50P06D TO-252

Place of Origin:ShenZhen China

...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and current handing capability Lead free product is

Brand Name:CANYI

Model Number:AP50P03NF

Place of Origin:shenzhen, China

...high voltage transistor AP50P03NF.pdf Description The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. General Features V DS = -30V,I D = -50A R DS(ON) < 18mΩ @ V GS =-4.5V R DS(ON) < 13mΩ @ V GS =-10V High...

Place of Origin:Afghanistan

Brand Name:Original

Model Number:BFN19

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Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

...NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE VCBO Collector-base voltage Open emitter 140V VCEO Collector-emitter voltage...

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

...NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS...

Brand Name:TI

Model Number:ULN2003ADR

Place of Origin:CN

...HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 16-SOIC Manufacturer Texas Instruments Series - Packaging Tape & Reel (TR) Part Status Active Transistor Type 7 NPN Darlington Current - Collector (Ic) (Max) 500mA Voltage...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Brand Name:Texas Instruments

Model Number:BQ26100DRPR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-...

Brand Name:ON Semiconductor

Model Number:MMBT5551LT1G

Place of Origin:China

MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automotive and Other Applications Requiring Unique ...

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

TK35N65W High Power Transistor 35A 650V Switching Voltage 270W 115nC 80 MOhms Power Supply Applications Switching Voltage Regulators DTMOSIV Series MOSFETs Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% ...

Brand Name:Central Semiconductor

Model Number:CMPT2484TRPBF

Place of Origin:CHINA

...Transistors GP BJT NPN 60V 50mA 3-Pin SOT-23 Discrete Semiconductor Specification : Category Discrete Semiconductor Products 　 Diodes - Diode SCHOTTKY Part number CMPT2484TR Package Tape & Reel (TR) Part Status Active Voltage - Zener (Nom) (Vz) 60 V Description Trans GP BJT NPN...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MJE13003

...Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing Method Pack Quantity MJE13003 TO-126 Bulk 200pcs/Bag MJE13003-TU TO-126 Tube 60pcs/Tube MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage...

Brand Name:XIWUER

Place of Origin:XIAN, CHINA

... for exciting atomic nuclei and receiving their weak signals. Its performance directly determines the instrument's sensitivity and accuracy. Both the high-power radio frequency pulses required by the transmitting coil and the low-noise amplifier at

Brand Name:SWT

Model Number:SW-PA-600011000-50C

Place of Origin:China

...High Power Amplifier Psat 49.5 dBm High Voltage RF Power Amplifier for microwave links Description This high-voltage RF power amplifier operates in the frequency range of 6 to 11 GHz and features a Psat (saturated output power) of 49.5 dBm. It is designed to deliver high-power output within this specific frequency band while maintaining signal integrity and reliability. Key features of this amplifier...

Brand Name:original

Model Number:LN2306LT1G

...NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET Technological Parameters: Drain-source resistance 0.038 Ω polarity N threshold voltage 0.7 V Drain-Source Voltage...