ne6510179a t1 a power mosfet

Model Number:NE6510179A-T1-A

RF Mosfet 3.5 V 200 mA 1.9GHz 10dB 32.5dBm 79A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 3.5 V 200 mA 1.9GHz 10dB 32.5dBm 79A

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID...

Brand Name:VISHAY

Model Number:SI9986DY-T1-E3

Place of Origin:CHINA

SI9986DY-T1-E3 SI9986DY SOP8 Motor Driver Power MOSFET DESCRIPTION The Si9986 is an integrated, buffered H-bridge with TTL compatible inputs and the capability of delivering a continuous 1 A at VDD = 12 V (room temperature) at switching rates up to 200 kHz...

Model Number:SIR668ADP-T1-RE3

SiR668ADP N-Channel 100 V (D-S) MOSFET The SiR668ADP is a high-performance N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It offers a very low RDS(on) x Qg figure-of-merit (FOM), optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is ...

Brand Name:Vishay Siliconix

Model Number:SI4488DY-T1-E3

Place of Origin:original

... voltage of 30V, a gate-source voltage of ±20V, a drain current of 61A, a drain-source on-state resistance of 0.312mΩ, and a maximum power dissipation of 85W. This MOSFET is ideal for high temperature and high voltage applications. Features: •

Brand Name:Vishay

Model Number:SI2333DDS-T1-GE3

Place of Origin:China

...T1-GE3 andnbsp; FEATURES andbull; TrenchFETandreg; Power MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET in an ultra-compact sC-70-3package, optimized for space-constrained, high-efficiency power...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:NE5520379A-T1

NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD ...

Categories:Vishay Ic

Country/Region:china

...MOSFET Brand: Vishay Product Type: MOSFET Subcategory: MOSFETs Here is an English introduction for the product code SQJ952EP-T1-BE3: SQJ952EP-T1-BE3 This high-power industrial electric motor is designed for general purpose continuous duty applications requiring up to 40 hp power input at 110-120V. Model: SQJ952EP-T1...

Brand Name:original

Model Number:SI4840BDY-T1-GE3

Place of Origin:original

SI4840BDY-T1-GE3 SMD / SMT MOSFET 40V Vds 20V Vgs SO-8 MouseReel FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: N-...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ...

Place of Origin:Original

... (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 1.6W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs 54 mOhm @ 4.3A,

Brand Name:VISHAY

Model Number:SI7911DN-T1-E3

Place of Origin:CHINA

Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No Product Category Power MOSFET Configuration Dual Dual Drain Channel Mode Enhancement Channel Type P Number of Elements per Chip 2 Maximum Drain ...

Brand Name:WINNER

Model Number:WNE T2

Place of Origin:CHINA

...Power Electronics in Automotive and Computing Equipment *The welding wire is manufactured from 6N high - purity aluminum material, with a certain proportion of trace elements added. *It is widely applied in the packaging of power semiconductors, including MOSFET, IGBT, Thyristor, GTO, Diode, etc. Al Wire for Power Type Ø Diameter (μm) Breaking Load BL(gf) Elongation EL(%) Length Meters WNE T1...

Model Number:SIC631CD-T1-GE3

Half Bridge Driver Synchronous Buck Converters Power MOSFET PowerPAK® MLP55-31L

Brand Name:Original Factory

Model Number:MC34VR500V1ES

Place of Origin:CN

.../DC regulator solution, with integrated power MOSFETs ideally suited for the LS1/T1 family of communication processors. Integrating four switching and five linear regulators, the MC34VR500V1ES provides power to the complete system, including the processor