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All mosfet with sr6 package wholesalers & mosfet with sr6 package manufacturers come from members. We doesn't provide mosfet with sr6 package products or service, please contact them directly and verify their companies info carefully.
| Total 87 products from mosfet with sr6 package Manufactures & Suppliers |
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BSC011N03LSIATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30 V Package 8-PowerTDFNBrand Name:Infineon Model Number:BSC011N03LSIATMA1 Place of Origin:original BSC011N03LSIATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30 V Package 8-PowerTDFN FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (Tc) Drive ... |
Shenzhen Sai Collie Technology Co., Ltd.
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30V N Channel MOSFET SOT 23 Package Featuring ASDsemi ASDM3400ZA R Trench Power LV MOSFET TechnologyModel Number:ASDM3400ZA-R ...MOSFET featuring Trench Power LV MOSFET technology and a high-density cell design for low RDS(ON). It offers high-speed switching capabilities, making it suitable for applications such as battery protection, load switching, and power management. This MOSFET is supplied in a SOT-23 package. Product Attributes Brand: ShenZhen Ascend Semiconductor Incorporated Technology: Trench Power LV MOSFET |
Hefei Purple Horn E-Commerce Co., Ltd.
Anhui |
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Brand Name:STMicroelectronics Model Number:STD2N105K5 ...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.05 kV ... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Place of Origin:CN Brand Name:Original Factory Model Number:MSCSM120AM08CT3AG Automotive IGBT Modules MSCSM120AM08CT3AG SiC Power MOSFET Modules SP3F Package [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:JUYI Model Number:JY09M Place of Origin:China JY09M N Channel Enhancement Mode Power MOSFET General Description Employing cutting-edge trench processing techniques, the JY09M attains remarkable cell density and minimizes on-resistance while featuring a low gate charge. These characteristics ... |
Changzhou Bextreme Shell Motor Technology Co.,Ltd
Jiangsu |
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Brand Name:Kentie Model Number:SR6-2RS Place of Origin:China SR6-2RS Stainless Steel Sealed Bearing 3/8"x7/8"x9/32" inch SR6-2RS Stainless Steel Sealed Bearing is made of Stainless Steel, each bearing are rubber sealed from both sides to protect the bearing from dust or any possible contamination, also bearing is pre-lubricated. Specifications of SR6-2RS Bearing Model SR6-2RS bearing Outer Diameter 7/8" Inner Bore 3/8" Width 9/32" Material Stainless Steel 420 Seals 2RS Lubrication Grease/oil Package |
Dongguan Kentie Bearing Co., Ltd.
Guangdong |
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Brand Name:original Model Number:SIHB22N60E-E3 Place of Origin:Original Manufacturer ...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Model Number:PR175-SR6-24-CM Product Overview This is a 24-port, 1U rack panel featuring shielded, right-angle CAT 6 RJ45 feed-through couplers. Designed for efficient network connectivity, it offers a clean and organized solution for managing network cables within rack environments.... |
Shenzhen ECER Network Technology Co., Ltd.
Anhui |
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Brand Name:VISHAY Model Number:SIHB22N60E-E3 Place of Origin:CHINA ... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Vishay Model Number:SI3454DV-T1-E3 Place of Origin:United States Manufacturer: Vishay Product category: MOSFET Technology: si Installation style: SMD/SMT Package/box: TSOP-6 Trade name: TrenchFET Package: Reel Package: cuttape Trademark: Vishay/Siliconix Product type: MOSFETs Series: SI3 Subcategory: Transistors Part ... |
Shenzhen Hefengxin Technology Co., Ltd.
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Brand Name:Microchip Technology Model Number:APT10090BLL Place of Origin:ORIGINAL ...Technology MOSFET FG MOSFET 1000V TO-247 RoHS Manufacturer: Microchip Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Packaging: Tube Brand: Microchip Technology Product Type: MOSFETs Subcategory... |
Wisdtech Technology Co.,Limited
Guangdong |
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Place of Origin:China ... ENHANCEMENT MODE MOSFET 2N7002K Electronics Component Part Number: JHT2544 Major Parameter: Part Number Logo Package VDS (V) ID (A) RDS(ON) (mΩ) VGS(TH) (V) @Vgs=10 @Vgs=4.5 Typical Range JHT2544 SOT-23 20 7.6 55 0.4 1.2 Brand: JF Package: SOT-23 ... |
Jinan Jingheng Electronics Co., Ltd.
Shandong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Model Number:GP60S50X Place of Origin:Guangdong, China Brand Name:Original ... up to 600V, with a current capacity of 50A, making it an ideal choice for demanding projects that require high-performance components. Designed with a TO-247 package, this MOSFET is reliable and easy to |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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Brand Name:Hua Xuan Yang Model Number:AOD478 Place of Origin:ShenZhen China ...MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Parameters Part Number Status Package... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:ROHM Model Number:2SB1316TL Place of Origin:Original ...mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980. Packaging specifications and hFE Type 2SB1580 2SB1316 Package... |
Anterwell Technology Ltd.
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:FDMS007N08LC High Power MOSFET FDMS007N08LC Power MOSFET 80V Single N Channel, 84A, 6.7mΩ in Power 56 Package. [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:INFINEON Model Number:IPZ40N04S5L-7R4 INFINEON Chip IPZ40N04S5L-7R4 MOSFET N-CH 40V 40A 8TSDSON Manufacturer: Infineon Product Category: MOSFET Technology: Si Package / Case: TSDSON-8 Packaging: Reel Company introduction: is a subsidiary of Chusinly (Hong Kong) Ltd., headquartered in 2004... |
Beijing Silk Road Enterprise Management Services Co., Ltd.
Beijing |
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Brand Name:JUYI Model Number:JY15M Place of Origin:China JY15M N Channel 40V Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY15M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with high repetitive avalanche rating... |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:Infineon Model Number:IRF7404TRPBF Place of Origin:Original Factory Original IRF7404TRPBF SOP8 P Channel 20V 7.7A SMD MOSFET Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |