mosfet with rf capability

Model Number:KZ-02P

Place of Origin:China

Brand Name:MYT

...extended range and precision capabilities. Long Detection Range: Up to 10-kilometer detection for reliable, accurate drone identification at far distances Wide Frequency Coverage: ...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Model Number:MRF9030

Place of Origin:original factory

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF151G

MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:KIC

Model Number:X5

...RF capability For Reflow Track More Data Points With 7, 9, and 12-channel models, the X5 is able to acquire a lot of data, allowing you to precisely evaluate each thermal profile and process in your factory. Measure slope, peak temperature, time above liquidous, and more. Data is transferred to your computer via a USB cable or, for RF...

Place of Origin:USA

Brand Name:KIC X5 Thermal Profiler

smt machine KIC X5 Thermal Profiler With SPC Software And RF Capability For Reflow oven We are the Authorized Distributor of KIC KIC X5 Thermal Profiler Specifications: KIC X5 Profiler 7 Channels : 206X60X17mm 9 ...

Brand Name:Rohde & Schwarz

Model Number:AFQ100B

Place of Origin:Germany

Rohde and Schwarz AFQ100B Signal Generators with 528 MHz Frequency Range Product Overview The Rohde and Schwarz AFQ100B signal generators offer exceptional performance for demanding applications requiring high bandwidth. With a bandwidth of 528 MHz (RF), ...

Brand Name:original

Model Number:FCF06A40

Place of Origin:original

Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...

Brand Name:Infineon Technologies

Model Number:IRF2804STRL7PP

Place of Origin:Multi-origin

.... Features: - Ultra-low gate charge (Qg) - Low drain-source on-state resistance (RDS(on)) - High avalanche energy capability - High current capability - High voltage capability: 100V - TO-220AB package Specifications: - Part

Brand Name:Olimex LTD

Model Number:ESP-32S

...RF TXRX MODULE SMD Olimex LTD Product Details Description The VIPer53E combines an enhanced current mode PWM controller with a high voltage MDMesh Power MOSFET in the same package. Typical applications cover offline power supplies with a secondary power capability...

Brand Name:NXP Semiconductors

Model Number:AFT05MS003NT1

... MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability...

Brand Name:ELT (Elite)

Model Number:SMP-JHD430

Place of Origin:China

...RF Connector Engagement Depth 2.79 RF Connector The SMP is a compact RF coaxial connector that can be easily pushed on or snapped into place, offering a small size, lightweight design, exceptional resistance to vibrations, and a wide operating frequency range. It is capable of functioning up to 30GHz, with some models extending this capability...

Brand Name:INFINEON

Model Number:BAT1705WH6327XTSA1

Place of Origin:original

BAT1705WH6327XTSA1 Chipscomponent Electronic Components IC Chips. Schottky DIODE with rectifier RF DIODE Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series BAT1705WH6327XTSA1 Reference Type Series Output Type Fixed Voltage - Output (Min/...

Brand Name:Original

Model Number:NCE8580

... choice for those in the electronics field. As a seller in this industry, we can tell you that the NCE8580 is a reliable and efficient choice for a variety of applications. Pros: - High-performance capabilities: With its low on-resistance,

Brand Name:Infineon Technologies

Model Number:BF999 E6327

Place of Origin:CHINA

BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? ...

Brand Name:Huixin

Model Number:MMBT7002K

Place of Origin:China

...MOSFET 60V 115mA N-Channel SC-70 SOT-323 These Devices are Pb−Free and are RoHS Compliant , Ultra−Small Surface Mount Package,Low Input/Output Leakage, Fast Switching Speed,Improved system efficiency. MMBT7002W SOT-323 Datasheet.pdf FEATURES 1. High density cell design for low RDS(ON) 2. Voltage controlled small signal switch 3. Rugged and reliable 4. High saturation current capability...

Brand Name:VBE

Place of Origin:CHINA

... RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provide efficient, high-power RF jamming capabilities...