mosfet with 100v rating

Model Number:HSU15810C

... The HSU15810C is a N-Channel Fast Switching MOSFET designed for high-performance applications. It features a 100V breakdown voltage and is optimized for fast switching characteristics. This MOSFET is suitable for general applications requiring efficient...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDT3612

High Power MOSFET FDT3612 100V N-Channel PowerTrench® MOSFET 3.7A, 120mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over ...

Brand Name:INFINEON

Model Number:IRF540NPBF

Place of Origin:N/A

IRF540NPBF MOSFET TRANSISTOR 100V 33A 44mOhm List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND EP20K100EFC324-2 ALTERA PIC16C57-LP/P MICROCHIP DPTV-DX6630B TRIDENT UPD78F0526AGB-8ET-A RENESAS ZXM62P03E6TA ZETEX ...

Brand Name:Anterwell

Model Number:2SB1316

Place of Origin:original factory

... the 2SD2195 / 2SD1980. External dimensions (Unit : mm) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -...

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Brand Name:Infineon

Model Number:IRF9540NPBF

Place of Origin:Original Factory

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in

Model Number:1206B104K101CT

Place of Origin:China

Brand Name:Walsin

...100V rated low ESR wide -55°C to +125°C range perfect for decoupling and power filtering Features Package size: 1206 (3.2 mm × 1.6 mm) Dielectric: X7R – stable performance from -55°C to +125°C (capacitance change within ±15%) Capacitance: 0.1 µF (104) Tolerance: ±10% (K) Rated voltage: 100V...

Brand Name:Infineon Technologies

Model Number:IRF7324TRPBF

Place of Origin:Mult-origin

Product Listing: IRF7324TRPBF N-Channel Power MOSFET Features: • N-Channel Enhancement Mode • Low On-Resistance • Low Gate Charge • Fast Switching Capability • Avalanche Energy Rated • Operating Temperature Range: -55°C to +150°C • Pb-Free Packages are ...

Brand Name:Nexperia

Model Number:PMV213SN,215

Place of Origin:the Netherlands

Manufacturer: Nexperia Product category: MOSFET Technology: si Installation style: SMD/SMT Package/box: SOT-23-3 Transistor polarity: N-Channel Number of channels: 1 Channel Vds- drain-source breakdown voltage: 100 V. Id- continuous drain current: 1.9 a. ...

Model Number:CL11-2A104J-100V

Product Overview The CL11-2A series polyester film capacitor is manufactured by DAFU. It is designed for general-purpose applications requiring stable capacitance and reliable performance. The product offers various voltage ratings and capacitance values...

Brand Name:OEM/ODM

Place of Origin:China

Model Number:FDB035N10A

Product Description: Programmable IC Chip is a powerful and reliable data acquisition IC that can be used in various applications. It features adjustable current output up to 2.7V to 5.5V, ESD protection of 2KV HBM, programming time of 10ms to 10s and ...

Brand Name:Hua Xuan Yang

Model Number:AP30N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID = 30 A RDS(ON) < 40mΩ @ VGS=10V Mosfet...

Model Number:BLF8G27LS-100V,118

...100V,118 Overview\\\\nBLF8G27LS-100V,118 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G27LS-100V...

Brand Name:onsemi

Model Number:FDS3992

Place of Origin:United States

FDS3992 Mosfet Array 100V 4.5A 2.5W Surface Mount 8-SOIC Datasheet:FDS3992 Category FET, MOSFET Arrays Mfr onsemi Series PowerTrench Product Status Active Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 100V ...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate ...

Brand Name:original

Model Number:STP45N10F7

Place of Origin:Original Manufacturer

... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

...MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 100V...

Brand Name:Original Factory

Model Number:IPD068N10N3GATMA1

Place of Origin:CN

...MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET...

Brand Name:IXYS

Model Number:IXTH200N10T

Place of Origin:Original Factory

General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current ...

Brand Name:Vishay / Siliconix

Model Number:IRF540

... applications. With a maximum current rating of 33 amperes and a maximum voltage of 100 volts, this MOSFET is up to almost any task. Its low on-resistance ensures that it can handle high currents with minimal power dissipation and heat generation,