mosfet transistor with high efficiency

Model Number:TC4420CPA

Place of Origin:original factory

TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV...

Brand Name:JUYI

Model Number:JY16M

Place of Origin:China

...density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ●

Brand Name:Hua Xuan Yang

Model Number:G120P06LR1D

Place of Origin:ShenZhen China

...Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

... Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package The StrongIRFET™ power MOSFET family is

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient...

Brand Name:Original Factory

Model Number:MSC040SMA120B4

Place of Origin:CN

High Efficiency N-Channel Power MOSFET Transistors MSC040SMA120B4 TO-247-4 Product Description Of MSC040SMA120B4 MSC040SMA120B4 device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.High efficiency to enable lighter, more ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMQ8205

High Power MOSFET FDMQ8205 GreenBridgeTM 2 Series of High-Efficiency Bridge Rectifiers [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Place of Origin:US

Brand Name:Original

Model Number:TPCA8016-H

Product Description Packaging Digi-Reel Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max...

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

...Stock MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency wit...

Model Number:BCX56-16,115

...transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation. They are suitable for a range of applications including linear voltage regulators, MOSFET...

Brand Name:AOS

Model Number:AO4447A

Place of Origin:CHINA

...Transistor AOS 1.General Description The AO4447A uses advanced trench technology to provide excellent RDS(ON)with low gate charge.This device is ideal for load switch and battery protection applications. RoHS and Halogen-Free Compliant 2.Applications System/Load Switct Battery Switch USB-PD Load Switc 3. 4.Why choose us? 100% new and originao with Advantage price High efficiency...

Brand Name:SZHUASHI

Model Number:YP601820T

Place of Origin:Jiangsu，China

...High Efficiency 20W Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a ceramic /metal flange package. Pout 20W Frequency 6000MHz Features High Efficiency...

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power Motor Drive Systems andnbsp; Description The IRF7351TRPBF is a high

Brand Name:UCHI

Model Number:SS8050W

Place of Origin:Dongguan China

SOT-323 high frequency low noise transistor(PNP) FEATURES - Collector Current.(IC= 1.5A) - Complementary To SS8550W. - Collector dissipation:PC=200mW(TC=25℃) APPLICATIONS - High Collector Current. ORDERING INFORMATION Type No.:SS8050W Marking: Y1 Package ...

Brand Name:Huarui

Model Number:Type

Place of Origin:China

China transistor medium frequency induction melting furnace system (third generation) with new IGBT dual unit China energy-saving transistor induction melting furnace system with high efficiency​ New generation IGBT dual unit module frequency electric ...

Brand Name:Top One Power

Model Number:GI-60224

Place of Origin:Guangdong

... and the ability to store huge amounts of information,create Top One excellent products! Brand new MOSTFET We import U.S. brand Infineon IR MOSFETs with certificate of origin, batch and date of production, which guarantees original and high quality. R&