mosfet transistor 600v

Brand Name:Original Factory

Model Number:STL24N60M6

Place of Origin:CN

...MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Temperature is -55°C ~ 150°C (TJ). Product Attributes Of STL24N60M6 Part Number STL24N60M6 FET Type N-Channel Technology MOSFET...

Place of Origin:US

Brand Name:Original

Model Number:IRG4PC40UDPBF

Product Description Product Detail Packaging Bulk Part Status Last Time Buy Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A Power - Max 160W ...

Model Number:STW48N60DM2

Place of Origin:Guangdong, China

Brand Name:Original

STW48N60DM2 N-Channel MDmesh DM2 Power MOSFET - High-Efficiency Power Conversion Solution Achieve Optimal Efficiency with Fast Recovery and Low On-Resistance Looking for a high-performance power MOSFET that can meet the demands of the most efficient ...

Brand Name:Canyi

Model Number:FQPF2N60C

Place of Origin:Guangdong, China

...MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capabilit General Description: These N-Channel enhancement mode power field effect transistors...

Brand Name:IR

Model Number:IRFPC60PBF

Place of Origin:CN

...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...

Brand Name:anterwell

Model Number:STW21NM60N

Place of Origin:original factory

... 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET General Features ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realized with the second generation. This revolutionary MOSFET ...

Brand Name:Infineon

Model Number:IPB60R099P7

Place of Origin:Original

...ª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the

Brand Name:original

Model Number:FCB36N60NTM

Place of Origin:original

FCB36N60NTM MOSFET Transistors Discrete Semiconductors original Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SC-70-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain...

Model Number:IRFBC30

Place of Origin:original factory

IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE ...

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

... Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK Advanced Process Technology Dynamic dv/dt Rating ...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:onsemi

Model Number:FDD390N15A

Place of Origin:Multi-origin

...MOSFET Power Electronics Features: • N-Channel • Logic Level Gate Drive • 175°C Operating Temperature • 175A @ 25°C Continuous Drain Current • Low Gate Charge • Low On-Resistance • Standard Package • RoHS and REACH Compliant Parameters: • Drain-Source Voltage: 600V...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:Vishay

Model Number:SI3454DV-T1-E3

Place of Origin:United States

...Vishay Product category: MOSFET Technology: si Installation style: SMD/SMT Package/box: TSOP-6 Trade name: TrenchFET Package: Reel Package: cuttape Trademark: Vishay/Siliconix Product type: MOSFETs Series: SI3 Subcategory: Transistors Part number alias: ...

Brand Name:Infineon

Model Number:IRF7404TRPBF

Place of Origin:Original Factory

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of

Place of Origin:China

Product Description Super Junction N-Channel Power MOSFET Electronics Component Part Number: SJ7N60 Major Parameter: Type Channel VDSS(V) (MAX) ID(A) (MAX) PD(W) (MAX) VGS(V) (MAX) VTH(V) Rds(on)(Ω) @10V (Typ) Rds(on)(Ω) @10V (max) Rds(on)(Ω) @4.5V(Typ) ...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG4BC30UDPBF

IRG4BC30UDPBF IGBT Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ ...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...