mosfet 30v 9 1a

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC855N

High Power MOSFET FDC855N N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:Infineon

Model Number:IRF7907TRPBF

MOSFET MOSFT DUAL NCh 30V 9.1A Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: N-Channel Number of Channels...

Brand Name:Microchip Technology

Model Number:MCP16311T-E/MS

Place of Origin:THAILAND

...Input Voltage Range: 4.4V to 30V • 1A Output Current Capability • Output Voltage Range: 2.0V to 24V • Qualification: AEC-Q100 Rev. G, Grade 1 (-40°C to +125°C) • ...

Brand Name:onsemi

Model Number:FDD8880

Place of Origin:original

FDD8880 MOSFET Power Electronics TO-252-3 Package N-Channel PowerTrench® MOSFET 30V General fast switching speed FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 58A (...

Brand Name:Ti

Model Number:CSD17575Q3

CSD17575Q3 Mosfet Power Transistor MOSFET MOSFET 30V, N-channel NexFET Pwr MOSFET 1 Features Low Qg and Qgd Low RDS(on) Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 3.3 mm × 3.3 mm Plastic Package 2 ...

Brand Name:IOR

Model Number:IRF7413TRPBF

Place of Origin:CHINA

...MOSFET 30V 13A 2.5W Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:JUYI

Model Number:JY213LH

Place of Origin:China

...Engineered using a floating-substrate and P-EPI process, it delivers excellent reliability, fast switching characteristics, and robust protection features. With ±1A peak source/sink capability, the JY213LH can efficiently drive medium-voltage MOSFETs and

Place of Origin:United States

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Brand Name:TYHD

Model Number:TYHD-EKL4

Place of Origin:Beijing , China

There are 3 types of fault passage indicators for underground cable No. Device Name Model Note 1 Cable fault passage indicator (locally) TYHD-UC 1. short-circuit judgment 2. earth fault judgmen magnetic ring structure) 3. local panel indictor (optical ...

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

EM6K1T2R ROHM MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:6G03S

...30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS(ON) < 16mΩ@ VGS=10V P-Channel VDS = -30V...

Brand Name:Vishay Semiconductors

Model Number:SI7121DN-T1-GE3

Place of Origin:USA

SI7121DN-T1-GE3 MOSFET 30V 16A 52W 1.8mohm @ 10V Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-...

Place of Origin:Original

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.1A (Ta) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 555pF @ 5V Vgs (Max) - FET Feature - Power Dissipation (Max) 2.5W (Ta) Rds On (Max) @ Id, Vgs 30 mOhm @ 7.1A...

Brand Name:Anterwell

Model Number:SI4435DY

Place of Origin:original factory

SI4435DY 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of ...

Brand Name:Original brand

Model Number:DMHT3006LFJ-13

Place of Origin:Original

Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management ...

Model Number:DMP34M4SPS-13

Place of Origin:Guangdong, China

Brand Name:Original

...MOSFET P-Channel 30V 34A 8SOP Optimize Your Notebook Battery Power and Load Switching with Top Quality DMP34M4SPS-13 If you're looking to boost the performance of your laptop and improve its battery life, you need DMP34M4SPS MOSFET. Designed with high-quality materials, this P-Channel MOSFET with a 30V...

Brand Name:INFINEON

Model Number:IRF7342TRPBF

...applications requiring efficient switching and thermal performance. Product Overview The Infineon IRF7342TRPBF is an N-channel enhancement-mode MOSFET utilizing advanced trench gate technology. Designed for power management applications, it delivers low on

Place of Origin:US

Brand Name:Original

Model Number:AO3401A

Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY4812

HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ...