medium power sot457 transistor

Model Number:2SC2411KT146Q

...Medium Power Transistor (32V, 500mA) The 2SC2411K is a medium power NPN transistor designed for driving circuits and low-frequency amplification. It features a high maximum collector current (ICMAX) of 0.5A and a low VCE(sat) for optimal low voltage operation. This transistor...

Place of Origin:Original

Brand Name:Original

Model Number:2SD882

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Brand Name:ONSEMI

Model Number:BD681

Place of Origin:Malaysia

...Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors...

Brand Name:ON

Model Number:MJE340G

Place of Origin:USA

...Medium-Power NPN Silicon Transistor 0.5A Power Transistor 300V 20W Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 • 0.5 AMPERE • Power Transistor...

Brand Name:ON

Model Number:MJE340G

Place of Origin:USA

...Medium-Power NPN Silicon Transistor 0.5A Power Transistor 300V 20W Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • These Devices are Pb−Free and are RoHS Compliant* • Complementary to MJE350 • 0.5 AMPERE • Power Transistor...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:NE5520379A-T1

NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ...

Brand Name:Original Factory

Model Number:FS300R17OE4B81BPSA1

Place of Origin:CN

FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. ​Specification Of FS300R17OE4B81BPSA1 Part Number ...

Brand Name:JC

Model Number:OSPF12N65C

Place of Origin:Jiangxi, China

...Power Jfet Transistor , Npn Transistor Amplifier 650V Power Jfet Transistor Features High input impedance and low level drive Avalanche energy tested Improved dv/dt capability,high ruggedness Low gate charge Low Rdson(typical 5.5mΩ) Fast switching Power Jfet Transistor Applications High efficiency switch mode power supplies Power...

Place of Origin:China

Brand Name:CQ

medium power 48v or 60v 1000watt motor Gearbox loading 1000kg rickshaw Rated Power(W) 1000 Rated Voltage(VDC) 48/60 Rated Speed(RPM) 310 No load Speed(RPM) 3700 Rated ...

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power...

Brand Name:Infineon Technologies

Model Number:IRFR1018ETRPBF

Place of Origin:Multi-origin

..., making it ideal for use in power supplies and other electronic devices. Low RDS(on): With a low on-resistance (RDS(on)) of just 10mOhms, this transistor offers low conduction losses and high efficiency. Robust Design: The IRFR1018ETRPBF features a

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power...

Brand Name:HENTG POWER

Model Number:S11-1250

Place of Origin:CHINA

... a primary low-voltage rating of 0.415kV and a secondary high-voltage side of 11kV, it converts power from wind turbine generators and solar PV inverter outputs into transmission-ready levels. Configured as a hermetically sealed oil-immersed ...

Model Number:FDPC5018SG

Place of Origin:America

Brand Name:ON

.../32A 8-Pin PQFN EP T/R Bom Service One- Stop Electronic Components BOM List Kitting Service IC Diode Transistor Capacitor Resistor Inductors Connectors Matching 1.

Brand Name:GINRI

Model Number:JR-16J

Place of Origin:CHINA

...Power PLC Transistor Module , PLC Negative Control DC Amplifier Board 1 , the load voltage, current type is different Load type: Transistors can only carry DC loads, while relays can have both AC and DC loads. Current: Transistor Current 0.2A-0.3A, Relay 2A. Voltage: The transistor...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ...

Brand Name:VBE

Model Number:VBE10R5

Place of Origin:CHINA

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz