igbt saturation voltage

Model Number:YGP20N65T2

... junction temperature of 175C, high breakdown voltage, short circuit rating, and very low saturation voltage (1.65V Typ. @ 20A). These IGBTs are suitable for soft switching applications, air conditioning, and motor drive inverters.Product Attributes Brand:

Brand Name:FUJI

Model Number:2MBI100N-060

Place of Origin:JAPAN

...IGBT Power Module 2-PACK IGBT 600V 100A IGBT MODULE ( N series ) n n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function ( ~3 Times Rated Current) n n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply Description 1. IGBT...

Brand Name:Fuji Electric

Model Number:2MBI75N-060

Place of Origin:JP

2MBI75N-060 IGBT POWER DIODE MODULE 600V 75A IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting ...

Brand Name:UTC-IC

Model Number:2SB1151-Y

Place of Origin:Original

...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. „ ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage...

Brand Name:Diodes Incorporated

Model Number:BC848BW-7-F

Place of Origin:United States

...: NPN Configuration: Single Maximum DC collector current: 100ma Maximum collector-emitter voltage VCEO: 30 V. Collector-base voltage VCBO: 30 V Emitter-base voltage VEBO: 5 V Collector-emitter saturation voltage: 200 mV Pd- power dissipation: 200mw Gain

Brand Name:ON Semiconductor

Model Number:MMBT2907ALT1G

Place of Origin:China

...andamp; Switching andnbsp; Features 1:Transistor Type: PNP Bipolar (BJT) 2:Voltage Rating: 60V Vandlt;subandgt;CEOandlt;/subandgt; 3:Current Rating: 600mA Continuous Iandlt;subandgt;Candlt;/subandgt; 4:Power ...

Brand Name:UTC-IC

Model Number:2SB1151-Y

Place of Origin:Original

...SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors „ FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. „ ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage...

Model Number:CH412TB

Product Overview This product is a magnetic sensor designed for various applications. It offers features like output saturation voltage, supply current, output leakage current, and magnetic thresholds. The device is available in multiple package types: SOT...

Model Number:6N139-000E

...Light Emitting Diode and an integrated high gain photodetector, offering TTL-compatible saturation voltages and high-speed operation. Separate pins for the photodiode and output stage allow for flexible configuration. The 6N139, HCPL-0701, and HCNW139 are

Brand Name:SANJOE

Model Number:TIG315MA

Place of Origin:CHINA

...Voltage Input DC Argon Arc IGBT TIG Welding Machine TIG315MA Features: 1, Using IGBT Single-tube inverter technology; 2, Wide-Voltage design; input volatge is 160v-560v 3, Full Bridge structure, good performance; 4, High frequency arcing, stable arc on welding; Parameters: TECHNICAL DATA UNIT TIG315MA Input Voltage...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:B772

SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low Speed switching Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous...

Brand Name:Original Factory

Model Number:PSS35S92F6-AG

Place of Origin:CN

... function. Specification Of PSS35S92F6-AG Part Number: PSS35S92F6-AG Product: IGBT Silicon Modules Configuration: 6-Pack Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.4 V Continuous Collector Current at 25°C: 35 A Pd -

Brand Name:Infineon Technologies

Model Number:IRGP4660D-EPBF

Place of Origin:original

... saturation voltage - High speed switching - High power cycling capability - Reverse voltage protection Specifications: - Maximum Collector-Emitter Voltage (VCES): 600V - Maximum Collector Current (IC): 100A - Maximum Gate-Emitter Voltage (VGE): ± 20V -

Brand Name:Mitsubishi Electric

Model Number:CM600DX-24T

Place of Origin:Japan

... IGBT MODULE IGBT MODULE T-SERIES NX TYPE DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Module Products: IGBT Silicon Modules Configuration: Dual Maximum collector-emitter voltage VCEO: 1.2 kV Collector-emitter saturation voltage: 1....

Brand Name:Infineon Technologies

Model Number:FF300R12KE4

Place of Origin:Original Factory

...Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage...

Brand Name:IXYS

Model Number:IXBT14N300HV

... of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of

Brand Name:Mitsubishi Electric

Model Number:CM450DY-24S 205G

Place of Origin:CHN

...42 IGBT Modules IGBT MODULES-SERIES DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.8...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

...IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features : • High speed switching • Low saturation voltage...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG50J6EL1

...IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max.) (IC = 50A) trr = 0.15µs (Max.) (IF = 50A) [1]Low saturation voltage...

Brand Name:IXYS

Model Number:IXGH48N60C3D1

.... This reliable NPT IGBT transistor offers several benefits, including: Pros: - Efficient power management: With a low collector-to-emitter saturation voltage, this transistor allows for more efficient power management in your electronic devices. -