high voltage mosfet transistor

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:FAIRCHILD

Model Number:MJD340TF

Place of Origin:Original

... Lead (I-PAK, “- I” Suffix) NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 3 V

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Model Number:MMBTA92

...high voltage NPN transistor in a SOT-23 package, designed for various electronic applications. It offers excellent breakdown voltages and good current gain characteristics.Product Attributes Brand: High Diode Semiconductor Package: SOT-23Technical Specifications Parameter Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC= -100A, IE=0 -300 V Collector-Emitter Breakdown Voltage...

Brand Name:ON Semiconductor

Model Number:MMBT5551LT1G

Place of Origin:China

MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits Features S and NSV Prefix for Automotive and Other Applications Requiring Unique ...

Brand Name:ZMSH

Place of Origin:China

...high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities, and improved efficiency. Among wide bandgap semiconductors, silicon carbide (SiC) has emerged as the material of choice due to its wide bandgap, high...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

...high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage...

Brand Name:original

Model Number:IRF431

Place of Origin:original

...Rugged palysllcon gBte cell structure ■Lqw input capacitance # Extended safe operatlng ar9g ●improved high temperature rellabllty ●TO~3 package (High voltage} Product Attribute Attribute Value Product Category: MOSFET Technology: Si Mounting Style:

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C ...

Brand Name:Original Factory

Model Number:IXTH24N50L

Place of Origin:CN

... Operation, the package is TO-247 (IXTH). Specification Of IXTH24N50L Part Number IXTH24N50L FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On,

Brand Name:Original Factory

Model Number:XC7K410T-3FFG676E

Place of Origin:China

Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Real 6-input look-up tables (LUTs) Memory capability within the LUT Register and shift register functionality Product Specifications Part Number XC7K410T-3FFG676E Moisture Sensitive: Yes Number of Logic Array Blocks - LABs: 31775 LAB Operating Supply Voltage: 1.2 V to 3.3 V Maximum Current: 10 MA Analog Supply Voltage...

Brand Name:JUYI

Model Number:JY12M

Place of Origin:China

...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage...

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

... or tube packed (TO-220, TO-218, TO-126). It can automatic feed transistor, detect back and front side. Forming tool can be customized for different forming needs, such as left-right windening leads, cutting leads to different ...

Brand Name:UCHI

Model Number:SGM8271/8272/8274

Place of Origin:Dongguan China

High Voltage Rail-to-RailOutput Operational Amplifiers Integrated Circuit IC The SGM8271 (single), SGM8272 (dual) and SGM8274(quad) are high voltage operational amplifiers, whichcan operate from 4.5V to 36V single supply or from±2.25V to ±18V dual power supplies. They provide awide input common mode voltage range and rail-to-railoutput voltage swing.The SGM8271/2/4 provide high...

Place of Origin:Hunan, China

Brand Name:GCE

Model Number:RBMS07S20-125A384V

...high voltage bms What? Why? How? High voltage bms is to make many cells in 8 strings, 12strings 13strings...24strings to be a basic module, and many same battery modules in series as a battery rack and many racks in parallel as a battery stack and many stacks in parallel as a battery bank and... GCE says, we can make 8 strings of cells, 12S ,13S...23S, 24S, any of them as a basic module, you many install a mosfet...

Brand Name:HT

Model Number:F16N65L TO-220F-3L

Place of Origin:China

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in