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All high read speed 330mb s emmc memory ic wholesalers & high read speed 330mb s emmc memory ic manufacturers come from members. We doesn't provide high read speed 330mb s emmc memory ic products or service, please contact them directly and verify their companies info carefully.
| Total 18 products from high read speed 330mb s emmc memory ic Manufactures & Suppliers |
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Place of Origin:Guangdong, China Brand Name:PG Model Number:G25064GTLCA eMMC IC FLASH 64GBIT EMMC 153FBGA FLASH NAND Memory IC 128GB 64Gb 32GB 16GB 8G X 8 eMMC5.1 153 WFBGA 11.5x13x0.8 WHY CHOOSE US? 1.Strong research and development strength 2. Our factory has advanced packaging and testing technology 3. Complete storage ... |
China Chips Star Semiconductor Co., Ltd.
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Brand Name:PG Place of Origin:Shenzhen, China Model Number:G2864TLCB/G28128TLCB/G28256TLCB/G2564LTCB/G25128LTCB/G25256LTCB .... PG Libra Series eMMC 5.1 Specifications Model G2564GTLIA G25128TLIA G25256TLIA G25512TLIA NAND Flash 3DTLC NAND 3DTLC NAND 3DTLC NAND 3DTLC NAND Capacity 64GB 128GB 256GB 512GB CE 1 2 4 4 Read Speed up to 330MB/s up to 330MB/s up to 330MB/s up to |
China Chips Star Semiconductor Co., Ltd.
Guangdong |
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Brand Name:Original Factory Model Number:IS21TF08G-JCLI Place of Origin:CN ...pSLC Mode NAND. Specification Of IS21TF08G-JCLI Part Number: IS21TF08G-JCLI Memory Organization: 8G X 8 Sequential Write: 135 MB/s Technology: FLASH - NAND (TLC) Sequential Read: 320 MB/s Supplier Device Package: 153-VFBGA (11.5x13) Package Outline Of |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Micron Model Number:MTFC4GLWDM-4M AAT Place of Origin:Original 2.7V-3.6V eMMc 4GB 70MB/s read speed 7.5MB/s write speed memory chip MTFC4GLWDM-4M MTFC4GLWDM-4M AAT Z, MTFC4GLWDM-4M AAT A Features • MultiMediaCard (MMC) controller and NAND Flash •Packages (RoHS compliant, "green package") – 153-ball TFBGA • VCC: 2.7–3.... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:original Model Number:IDT7024L20GB Place of Origin:original IDT7024L20GB Original SRAM 4KX16 DUAL PORT Tray Memory Data Storage Features ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ◆ High-speed access – Commercial: 15/17/20/25/35/55ns (max.) – Industrial: 20ns (max.) –... |
Walton Electronics Co., Ltd.
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Brand Name:Macronix Model Number:MX25V2035FZUI Place of Origin:Multi-origin Product Listing: MX25V2035FZUI Flash Memory Chip Features: 2.0V Power Supply Voltage 3V/3.3V I/O Voltage 32Mbit (4M x 8bit) Capacity Serial Peripheral Interface (SPI) Standard SPI Mode Dual Output Fast Read (DOFR) Mode Quad Output Fast Read (QOFR) Mode ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:PHILIPPINE Brand Name:Micron Technology Model Number:MT4LC4M16R6TG-5 Quick Detail: DRAM Description: The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits... |
Mega Source Elec.Limited
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Brand Name:original ...IC Memory Chip MTFC4GLDEA-0M WT Integrated Circuit Products Specifications Category Integrated Circuits (ICs)/Memory/Memory (ICs) Manufacturer micron Package WFBGA-153(11.5x13) Memory Size 4GB Operating temperature -25℃~+85℃ Reading Speed in Sequence 30MB/S Writing Speed in Sequence 6.6MB/S configuration MLC NAND Stand-By Current - Controller Stand-By Current - NAND Operating Voltage (VCCF) 2.7V~3.6V Interface eMMC... |
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:KIOXIA Model Number:THGBMTG5D1LBAIL Catalogue eMMC Interface type eMMC 5.0 Storage capacity 4GB Working temperature-25℃ ~+85℃ Sequential reading speed 152 MB/s Sequential writing speed is 14 MB/s NAND working voltage (VCCF) is 2.7V ~ 3.6V. The working voltage (VCCQ) of the controller is 2.7V... |
Shenzhen Hefengxin Technology Co., Ltd.
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Brand Name:SST Model Number:SST25VF064C-80-4I-Q2AE-T Place of Origin:Taiwan Programmer IC Internal Circuit SST25VF064C-80-4I-Q2AE-T 64 Mbit SPI Serial SST25VF064C-80-4I-Q2AE-T 64 Mbit SPI Serial Dual I/O Flash FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 a... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Renesas Electronics America Inc Model Number:71V546S100PFG Product Details DESCRIPTION: The IDT71V509 is a 3.3V high-speed 1,024,576-bit synchronous SRAM organized as 128K x 8. It is designed to eliminate dead cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given... |
Sanhuang electronics (Hong Kong) Co., Limited
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Brand Name:Micron Model Number:MT41K256M16TW-107 IT:P Place of Origin:USA ...IC chips IC DRAM 4GBIT PARALLEL Integrated circuit Flash memory EEPROM DDR EMMC MT41K256M16TW-107 I MT41K256M16TW-107 IT:P DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Categories:Memory ICs Country/Region:china Product Details: "M95512-WMN6TP" Introducing the M95512-WMN6TP - a high-performance, serial EEPROM (Electrically Erasable Programmable Read-Only Memory) designed to provide non-volatile storage solutions for a wide range of applications. This exceptional ... |
Shenzhen GS Electronic Technology Co., Ltd. CN
Guangdong |
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Brand Name:ALLIANCE Model Number:AS4C1M16F5-60JC Place of Origin:Malaysia ... DQ • Fast page mode • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:MDTIC Model Number:MT41J128M16HA-15E-D Place of Origin:Original Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ... |
Anterwell Technology Ltd.
Guangdong |
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Categories:Rotary Position Sensor IC Country/Region:china ...IC Chips UFS As a next-generation embedded memory chip, the BIWIN UFS chip is three times faster than the latest eMMC 5.1 standard. In addition, UFS 2.1's faster performance could effectively ensure the safe transmission of data without unnecessary lag caused by reading and writing operations, which is the key to the higher speed... |
Angel Technology Electronics Co
Hongkong |
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Categories:Integrated Circuit IC Chip Country/Region:china MT25QU128ABA1EW9-0SIT Products Description: The MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms... |
DINGCEN INTERNATIONAL (HK) LIMITED
Guangdong |
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Brand Name:IHANG Model Number:IH58 Place of Origin:China ...Memory eMMC 8G/18GB and Support Max64GB SD card Display 4.0inch 480*800 high resolution, full axis viewing IPS LCD With Industrial touch panel Key pad 23 physical Keyboards IC card reader EMV/PBOC2.0 L1&L2; ISO 7816 with 2 SAM CARD slot Expansion Slot Mini SD Card Slot USB 1 USB (OTG),1 USB(RS232) Printer High Speed, High |
iHang Tech Co.,Ltd
Guangdong |