high power fets for rf applications

Place of Origin:MALAYSIA

Brand Name:ERICSSON

Model Number:PTF180901F

PTF180901F is a GSM/EDGE RF Power FET . Part NO: PTF180901F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Over View: Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:onsemi

Model Number:NTK3134NT5G

Place of Origin:original

...Power Electronics SOT-723 High Power N-Channel Transistor Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 350mOhm @ 890mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Vgs (Max) ±6V Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 16 V FET Feature - Power...

Brand Name:SWT

Model Number:SW-PA-100500-51C

Place of Origin:China

...RF power Amplifier for research projects requiring high-power,low-frequency RF amplification Description The 0.1~0.5 GHz Psat 51 dBm RF Power Amplifier is a high-performance amplifier designed for a wide range of RF applications. This amplifier is ideal for communication systems, broadcasting, radar, test and measurement, and other applications requiring robust power...

Brand Name:LENOLINK

Model Number:200W RF LOAD with 4.3-10 connector

Place of Origin:CHINA

... waterproof. 5. Connector :4.3-10 male New innovations 1. Designed for co-siting purposes 2. Enables feeder sharing 3. Suitable for indoor or outdoor applications 4. Integrated auto-sense technology for automatic DC/AISG 5.

Model Number:RG119

Place of Origin:Shanghai, China

Brand Name:Bing Wire & Cable

Product Description RG119 M17/69 is a MIL-DTL-17 compliant 50 Ohm high power coaxial cable engineered for applications demanding extreme voltage handling and thermal resilience. This heavy-duty transmission line features a 2.60mm bare copper inner ...

Categories:RF Termination Load

Country/Region:china

...PDAS applications. ★Low insertion loss. ★High power handling. ★Small size, Low weight. ★Good stability. Specifications: Frequency Range(MHz) 350-6000 VSWR ≤ 1.3 PIM3 (dBc@2*43dBm) ≤ -150/-155/-160 Input Power(W) 100 Impedance(Ω) 50 RF ...

Brand Name:Vinncom

Model Number:VN-LD-4G-60~80W-ONM

Place of Origin:CHINA

80 Watts N Male 3.8GHz 4GHz RF Dummy Load Termination Wide band Good VSWR Good water resistance Part Number VN-LD-4G-60~80W-ONm Operating Frequency ( GHz ) 0-4 Impedance ( Ohm ) 50 VSWR ≤1.20 IM3 (dBc @ 2×43dBm) -110 / -120 Application Indoor & Outdoor ...

Brand Name:Terui

Model Number:TRI-NMF-200-18-40

Place of Origin:China

RF Fixed Attenuators N RF Fixed Attenuator is used to reduce the signal level. The general reason for wanting to reduce the signal level may be to avoid receiving a signal with too high a level in a hierarchical circuit, or to meet the need to control the ...

Brand Name:STMICROELECTRONICS

Model Number:BTA41-600BRG

Place of Origin:Original

BTA40, BTA41 and BTB41 Series DESCRIPTION Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction ...

Brand Name:STMICROELECTRONICS

Model Number:BTA41-600BRG

Place of Origin:Original

BTA40, BTA41 and BTB41 Series DESCRIPTION Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction ...

Brand Name:XQCERA

Model Number:Customization

Place of Origin:Hunan, China

Category Performance Usage Zirconia High strength, high wear resistance, high resistivity, high fracture toughness, adiabatic, high refractive index 1. Home appliances, automotive electronics, communications, lightning protection facilities, defense, ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:BOCHEN

Model Number:RIG22

Place of Origin:Chengdu

...Designed with excellent high-frequency behavior, high power endurance, and outstanding environmental stability, RIG22 is the go-to solution for demanding systems where precision, consistency, and reliability are critical. With rated power up to 1000W and a

Model Number:C4H2350N10Z

Product Overview Ampleon offers a comprehensive range of RF power solutions for Wireless Infrastructure, designed to meet the evolving demands of 5G NR and beyond. Leveraging decades of RF power leadership, Ampleon provides technology-agnostic solutions ...

Brand Name:DALEE

Model Number:DL50011207

Place of Origin:Guangdong,China(Mainland)

... and the latest REACH Voltage Rating: 60 VAC Operating Temprature: -40℃ - +85 ℃ Nominal Characteristic Impedance: 50 ohm Applicable Frequency: DC~6 GHz Vspr: 1.3 MAX.(DC~3GHz). 1.5 MAX.(3~6GHz) Contact plating : 1u’’/1.5u’’ Grounded plating:

Place of Origin:Sichuan, China

Brand Name:BONENS

Model Number:RIG41-800W

... Easy installation and reliable operation Ideal for power dividers, isolation resistance, and terminal load resistance in high-frequency circuits Widely used in cavity couplers, combiners, duplexers, TV/FM transmitters, base station antennas, and

Categories:RF Power Amplifier Module

Country/Region:china

...High Power Amplifier Module High-Efficiency RF Power Amplifier for X-Band Applications The 8-10 GHz 50W Power Amplifier Module is a high-performance X-band RF amplifier designed for demanding wireless communication, radar, electronic warfare, instrumentation, and defense applications. Featuring advanced GaN technology, the module delivers outstanding output power, excellent linearity, high...

Place of Origin:CN

Brand Name:Original Factory

Model Number:NV6044C

... GaN IC GaNFast™ Power FET IC DPAK-2L High Performance eMode GaN FET IC Product Overview The NV6044C GaN IC GaNFast™ Power FET IC in DPAK-2L package delivers high performance eMode GaN FET technology for advanced power applications. MJD Advantage 15+ ...

Model Number:TX-MN2

Place of Origin:China

...high power 100W RF power amplifier module counter UAV FPV TXtelsig high power 100W PA 1200-1500 MHz rf power amplifier module is a kind of customizable module .This power amplifier takes advance RF technology that can cover about 1200-1500MHz frequncy range .At same time the module with excellent thermal management to meet much dements of various professional application .This is high power...

Brand Name:Wolvesteam

Model Number:JM170411

Place of Origin:China

High Power for 50meters Jamming Radius RF Signal Jammer Product Description The special design of the RF Jammer can only block the specific frequency. In that case, the operating 315/433MHz and it could block signals of car and garage door at a distance up to 50m. This equipment can plug and play without causing danger to humans and animals. In addition it has an additional feature of remote jamming TV and toy vehicle. Application...