high efficiency rf power transistors

Model Number:BLF174XR

Place of Origin:USA

... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding ...

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA

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Brand Name:Analog Devices Inc.

Model Number:HMC1122LP4METR

Place of Origin:Multi-origin

...-power applications. This device offers excellent linearity and efficiency, and is capable of delivering up to 17 dB gain and 50 W of output power. It is ideal for use in broadband power amplification applications such as cellular base stations, Wi-Fi, and

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / ...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor is supplied in a ceramic /metal flange package. Votage 28V Pout 50W Features: High

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

...Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode recovery phase • Optimized softness APPLICATIONS • Charging stations for electric vehicles • LED lighting • Telecom • Servers • Solar inverters BENEFITS • Extremely high...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:Sinoscite

Model Number:SNSD-204-004080

Place of Origin:Sichuan, China

...High Isolation RF Power Divider Low VSWR 2.92 Female Connector​ 1 Advantages about rf power divider: 1. Low Insertion Loss, High power handling. 2. High quality, Low price, Fast delivery. 3. Custom design available upon request. 4. Competitive price. 5. High powercapacity,. excellent isolation 2 .Description: A power divider divides an incoming signal into two (or more) output signals. In the ideal case, a power...

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

HIGH VOLTAGE SINGLE MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:Wanan

Model Number:YE3/YE4/YE5

Place of Origin:China

High Efficiency Low Power Consumption Three Phase Electric Motor For Coiler 1. Description The High-Efficiency Three-Phase Electric Motor designed for coiler applications combines superior performance with low power consumption. Engineered for optimal efficiency, this motor ensures reliable and energy-saving operation, making it an ideal choice for coiling processes. With advanced technology, it delivers robust performance while minimizing power

Brand Name:SWT

Model Number:SW-PA-400012000-50C

Place of Origin:China

...High Frequency RF Power Amplifier for electronic warfare, and other specialized RF System Description This specific introduction pertains to a 100W continuous wave (CW) high-frequency RF power amplifier operating in the 4-12 GHz frequency range. Here is a detailed description: Frequency Range: This amplifier operates within the 4-12 GHz frequency range, making it suitable for high-frequency RF...

Brand Name:ESTEL

Model Number:GPE4890A

Place of Origin:Shenzhen, China (Mainland)

...High Efficiency Telecom Power System High Efficiency Quick Details: Place of Origin: Shenzhen, China (Mainland) Input Voltage: AC220V Brand Name: ESTEL Output Voltage: DC48V Model Number: GPE4890A Output Current: 90A Product Name: Telecom Rectifier System Input Frequency 45~65Hz Certification: ISO9001, CE, 3C, FCC, TLC Input Current: 29.7A Installation Mode: 19” rack Power...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Miracle Bean

Model Number:XH-LPV-100W

Place of Origin:Guangdong,China

... energy from a source into the specific voltage, current, and frequency required by electrical or electronic equipment. It ensures stable and reliable power delivery, protecting devices from voltage fluctuations, surges, or overloads. Power supplies can be