gallium nitride fet mosfet

Place of Origin:CN

Brand Name:Original Factory

Model Number:TP65H070G4QS

TP65H070G4QS GaN IC Gallium Nitride FET 650V SuperGaN FET GaN FETs [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Brand Name:zmkj

Model Number:GaN-FS-C-D-C50-SSP 2inch

Place of Origin:CHINA

...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer,Non-Polar Freestanding GaN Substrates(a-plane and m-plane) GaN Wafer Characteristic III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride

Brand Name:zmkj

Model Number:GaN-2INCH 10x10mm

Place of Origin:CHINA

...Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size GaN wafer for LED, mocvd Gallium Nitride wafer 10x10mm,5x5mm, 10x5mm GaN wafer III-Nitride(GaN,AlN,InN) Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride...

Place of Origin:Original

...FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On,Min Rds On) 8V Vgs(th) (Max) @ Id 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V Vgs (Max) ±18V FET...

Brand Name:nengxun

Model Number:NX-GR100

Place of Origin:CHINA

... Nitride Anti-Drone Module, a powerful component designed to detect and neutralize drones effectively. This innovative product falls under the category of interference ...

Brand Name:OEM/ODM

Model Number:VY-USB PD Cable-5

Place of Origin:China

PD3.0 Notebook GaN Gallium Nitride 65W Gallium Nitride Charger Pd Fast Charge Mobile Phone Charger 3c Charging Head Indicating function With indication function Input ...

Brand Name:INNOTION

Model Number:YP601238T

Place of Origin:Jiangsu, China

INNOTION 7W 28V Gallium Nitride RF Power Transistor YP601238T with High Efficiency Gain and Wide Bandwidth DC to 7.2GHz Product Description Innotion’s YP601238T is a 7-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) ...

Brand Name:YJJ

Model Number:GS-ABC-2835M

Place of Origin:CHINA

Product Description: GS-ABC-2835M gallium nitride based UV photodiode for UV index monitoring Features: General Features: l UVA+UVB+UVCphotodiode l Photovoltaic mode operation l ...

Brand Name:Kimghz technology

Model Number:KH-PAC50W

Place of Origin:Original/CHINA

Gallium Nitride (GaN) 50W Drone Signal Jamming Amplifier Module – 100–8000MHz This 100-8000MHz wideband amplifier module is purpose-...

Brand Name:Silian

Model Number:Customized

Place of Origin:China

Gallium Nitride on Sapphire Wafers (GaN) We grow are sapphire wafers using several methods Czrochroski (CZ) process is known to be more efficient for c-axis sapphire ...

Brand Name:AOS

Model Number:AO3407A

Place of Origin:original

AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

... Hole TO-220AB Specification: Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)

Brand Name:STMicroelectronics

Model Number:STW9N150

STW9N150 MOSFET N-CH 1500V 8A TO247-3 Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Mfr STMicroelectronics Series PowerMESH™ Package Tube Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRF1404ZPBF

Place of Origin:CHINA

...Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ...

Brand Name:INFINEON

Model Number:IPD90N06S4-04

Place of Origin:China

IPD90N06S4-04 TO-252 60V 90A FET MOSFET Silk screen 4N0604 Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IPD90N06S4-04 is manufactured by INFINEON and distributed by Stjk. As one of the leading distributors of electronic ...

Brand Name:Infineon Technologies

Model Number:BSC320N20NS3G

Place of Origin:Original

...-freeaccordiCM GROUPoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain

Brand Name:VBE

Model Number:VBE6003H

Place of Origin:CHINA

Model Number:ATQ2516 High-frequency Transformer

Brand Name:ZHY

Place of Origin:China

Brand Name:Vizz

Model Number:PD38

Place of Origin:China

Mini PD QC Fast Charging 65W GaN Wall Charger EU Plus Universal Charger Products Features 1, The macebook will be changed full about 90 minuties 2, High efficiency charging& Low heat dissapation 3, Smaller size, only want 35. 7* 35. 7* 52mm 4, Full ...

Brand Name:INFEINEON

Model Number:IPB017N10N5LFATMA1

Place of Origin:Original Brand

...price . Thank you ! category Discrete semiconductor products transistor FET, MOSFET single FET, MOSFET manufacturer Infineon Technologies series OptiMOS™-5 FET type N-channel technology MOSFET (metal oxide) Leakage source voltage (Vdss) 100 V Current at 25 ° ...