gallium arsenide hemt transistor

Brand Name:zmkj

Model Number:6inch S-C-N

Place of Origin:CHINA

.../3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth ...

Brand Name:zmsh

Model Number:GaAs-3inch

Place of Origin:china

... GaAs) Gallium Arsenide Wafers Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. Gallium arsenide is used in the

Brand Name:PAM-XIAMEN

Place of Origin:China

...Gallium Arsenide) Substrate With Low EPD , 3”, Prime Grade PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide...

Brand Name:ZG

Model Number:MS

Place of Origin:CHINA

Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry...

Model Number:G12183-003K

Place of Origin:Japan

G12183-003K High-performance Indium Gallium Arsenide (InGaAs) PIN Photodiode for Optical Power Meters and Laser Power Detection Features: InGaAs PIN photodiode for long near-...

Place of Origin:CN

Brand Name:Original Factory

Model Number:HMC1049LP5E

Wireless Communication Module HMC1049LP5E Gallium Arsenide RF Amplifiers QFN32 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Place of Origin:CHINA

Brand Name:UND

Gen3 GaAsGreen/White Gallium Arsenide Photocathode Night Vision tube Image Intensifier Tube Item Gen2+ Gen3 Unit FOM 1200-2000 1900-...

Brand Name:HT

Model Number:HT-BGW

Place of Origin:China

HT-BGW Glass Grinding Wheel For Gallium Arsenide GaN Wafer High Efficiency Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can offer an excellent selection of back grinding wheels. This particular grinding ...

Model Number:CGH40045F

Place of Origin:Malaysia

Brand Name:KAIGENG

CGH40045F N/A Electronic Components IC MCU Microcontroller Integrated Circuits CGH40045F #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:original

Model Number:FODM217DR2

Place of Origin:original

... circuits transistor output optocouplers 4 PIN TRANSISTOR OUTPUT MFP SR2835ESKG The FODM217 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. The FODM214 series consist of two gallium arsenide infrared emitting...

Brand Name:SZHUASHI

Model Number:YP601820T

Place of Origin:Jiangsu，China

...Gallium Nitride 28V DC-6GHz 20W RF Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor...

Brand Name:Analog Devices Inc.Analog Devices Inc.

Model Number:AD8364ACPZ-REEL7

Place of Origin:Multi-origin

Product Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular and other wireless applications. Features...

Brand Name:Anterwell

Model Number:TLP734

Place of Origin:original factory

... optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. Collector−...

Model Number:TLP734

Place of Origin:original factory

... optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. Collector−...

Brand Name:Toshiba Semiconductor and Storage

Model Number:TLP181GR

Place of Origin:CHINA

... Transistor Output 3750Vrms 1 Channel 6-MFSOP Description: The TOSHIBA mini flat coupler TLP181 is a small outline coupler, suitable for surface mount assembly. TLP181 consist of a photo transistor optically coupled to a gallium arsenide infrared...

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FLC081

FLC081 is a GaAs FET & HEMT Chip. Part NO: FLC081 Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Place of Origin:Original

NPT2010 Specifications Part Status Active Transistor Type HEMT Frequency 0Hz ~ 2.2GHz Gain 15dB Voltage - Test 48V Current Rating - Noise Figure - Current - Test 600mA ...

Brand Name:ON Semiconductor

Model Number:4N35M

Place of Origin:Original & New

4N35 Transistor Output Optocoupler 4N35M DIP-6 Optoisolator Photovoltaic Output Description The general purpose optocouplers consist of a gallum| arsenide infrared emiting diode driving a silicon phototransistor in a standard plastic six-pin dual-in-ine ...

Brand Name:VBE

Model Number:VBE6006H

Place of Origin:CHINA