fets mosfets with high power handling

Model Number:BLM2302

...Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, enabling operation with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, featuring high power and current handling...

Brand Name:Infineon Technologies

Model Number:IRFP7530PBF

Place of Origin:original

... threshold voltage of 4V. It has a maximum drain current of 61A and a maximum drain source resistance of 0.0084 Ohms. It offers a maximum power dissipation of 225W and a maximum junction temperature of 175°C

Place of Origin:China

Brand Name:ONSEMI

Model Number:SSN1N45B

High Power MOSFET SSN1N45B Power MOSFET, N-Channel, B-FET, 450 V, 0.5 A, 4.25 Ω, TO-92 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ...

Brand Name:ON

Model Number:NDP6060L

Place of Origin:original

NDP6060L Chipscomponent Electronic Components IC Chips NDP6060L High Power MOSFET electronic chip brand new original TO-220(TO-220-3) MOSFET N-Ch LL FET Enhancement Mode Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series NDP6060L Reference ...

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet...

Brand Name:Original

Model Number:IRFP064

...Powerful MOSFET for High Power Applications Pros and Cons of the IRFP064 MOSFET Are you seeking a powerful and reliable MOSFET for your high power applications? The IRFP064 is an excellent choice! This MOSFET boasts a drain-source voltage of 55V, a continuous drain current of 110A, and low on-resistance for efficient operation. Pros: - High power handling...

Brand Name:CANYI

Model Number:SI2301

Place of Origin:Guangdong, China

...MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.2 A Pulsed Drain Current 1) IDM -8 Maximum Power

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:Infineon Technologies

Model Number:IPP65R110CFDA

Place of Origin:United States

IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features:IPP65R110CFDA Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (...

Categories:Electronic Semiconductors

Country/Region:china

...high-performance N-Channel MOSFET designed for a variety of applications requiring efficient switching and amplification. Known for its low on-resistance and high current-handling capability, this MOSFET is ideal for power management, load switching, and DC-DC conversion in electronic systems. Key Features Low On-Resistance (Rds(on)): 0.022Ω at 4.5V, ensuring minimal power loss and high efficiency. High

Brand Name:FAIRCHILD

Model Number:FDP085N10A

Place of Origin:America

... Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to

Brand Name:DELI

Model Number:AOTF14N50

Place of Origin:Original

Part Number: AOTF14N50 Description: MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id...

Brand Name:JH Stock

Place of Origin:Shenzhen

...High Power MOS Module 5 ~ 40 Volt Description of Hot Bed Special MOS Tube Extension : 3D printer hot bed high-power expansion MOS module. Very powerful MOSFET to withstand higher current than normal RAMPS or other 3D Printer controller can handle. Solves the problem of current load and too much heat bed power...

Place of Origin:Japan

Brand Name:SUMITOMO

Model Number:FLL177ME 216-0774191 Computer GPU CHIP AMD IC

quick details: Place of Origin: Taiwan Brand Name: ATI Model Number: 216-0774191 Type: N/A Application: N/A Supply Voltage: V Dissipation Power: W Operating Temperature: °C Package: BGA Date code: 2011+ ROHS origin: United States Lead-free products: YES ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Original Factory

Model Number:IPD068N10N3GATMA1

Place of Origin:CN

...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET...

Model Number:FDMQ8203

Place of Origin:America

Brand Name:ON

...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power...

Brand Name:STMicroelectronics

Model Number:STP55NF06FP

Place of Origin:China

...Power MOSFET with andlt;0.02andOmega; RDS(on) TO-220FP Avalanche Rated Logic Level High Speed Switching and Low Gate Charge for Efficient Power Control andnbsp; Features 1:Low On-Resistance (Low RDS(on)): Extremely low maximum on-resistance of 0.02andOmega; (at Vgs=10V), reducing conduction losses, improving efficiency, and minimizing heat generation. 2:High Current Handling: Capable of handling...