fet power transistor gp4

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:Original Factory

Model Number:IPP65R190CFD7A

Place of Origin:CN

...FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip​ Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R190CFD7A Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V Power...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44N

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V Power...

Brand Name:Ti

Model Number:CSD13202Q2

...Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 2-mm × 2-mm Plastic Package 2 Applications Optimized for Load Switch Applications Storage, Tablets, and Handheld Devices Optimized for Control FET...

Model Number:YP601238T

Place of Origin:Jiangsu, China

Brand Name:INNOTION

...Power Transistor YP601241T Product Overview Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a plastic SOT-89 package. Technical Specifications Package SOT-89 Output Power...

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Brand Name:Altrasonic

Model Number:HS-GT30

Place of Origin:China

High Tech 30 Khz Robot Arm Ultrasonic Riveting Welding Machine , FET Power Output Definition of ultrasonic auto plastic welding: Ultrasonic welding is a high-tech technology of sintered plastic products. The use of this ...

Brand Name:SURINGMAX

Model Number:18 mosfets 35A

Place of Origin:CHINA

...power transistors for electric motorcycle 18 mosfets 35A controller 48-96v factory direct Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 48-96v Rated Power...

Brand Name:Texas Instruments

Model Number:BQ26100DRPR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI BQ26100DRPR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 54 pct. Popularity High Is this a common-used part? Yes Win Source Part Number 011972-...

Brand Name:ML

Model Number:ML-309A

Place of Origin:China

Features: It is suitable for the forming of pipe-packaged power transistors, audions, and other electronic components of similar shape. *Its speed can be adjusted steplessly. It is easy to operate and maintain. Molds can be made upon the customer’s ...

Model Number:MRF148A

Place of Origin:Malaysia

Brand Name:KAIGENG

MRF148A N/A Electronic Components IC MCU Microcontroller Integrated Circuits MRF148A #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:CGHV1J025D-GP4

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have CGHV1J025D-GP4 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Categories:Bipolar RF Transistors

Country/Region:china

RF Transistor NPN 12V 80mA 9GHz 600mW Surface Mount Chip

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

...Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power...