fet power transistor 40v

Brand Name:Hua Xuan Yang

Model Number:G025N04LQ1D-U-V

Place of Origin:ShenZhen China

... power supplies Switching power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and ...

Brand Name:AOS

Model Number:AOD454A

Place of Origin:original

AOD454A MOSFET Power Electronics N-Channel Enhancement Mode Field Effect Transistor 40V 20A Package TO-252 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ ...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

...Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor...

Brand Name:DIODES

Model Number:MMDT4413-7-F

Place of Origin:DIODES

...Transistor 40V 0.6A SOT363 Array Bipolar Tube MMDT4413-7-F Array transistor BJT TRANS NPN/PNP 40V 0.6A SOT363 Array bipolar tube Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-363-6 Transistor...

Brand Name:Original

Model Number:IPG20N06S4L14AATMA1

Place of Origin:Original

...Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TDSON-8 Transistor

Model Number:HYG023N04LS1P

Product Overview The HYG023N04LS1P/B is an N-Channel Enhancement Mode MOSFET from Hymexa, designed for power management applications. It features a 40V/170A rating with low on-resistance (RDS(ON) = 2.1 m typ. @VGS = 10V) and is 100% avalanche tested for ...

Brand Name:Hua Xuan Yang

Model Number:HXY1404S

Place of Origin:ShenZhen China

... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors. 40V/12A R DS(ON) = 13mΩ(typ.)

Brand Name:MITSUBISHI

Model Number:RD06HVF1

Place of Origin:Original

... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:original

Model Number:SIHB22N60E-E3

Place of Origin:Original Manufacturer

... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...

Place of Origin:US

Brand Name:Original

Model Number:2N3906

... Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 625mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-...

Brand Name:Ti

Model Number:CSD18501Q5A

...Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET 1 Features Ultra low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control 3 Description This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFETTM power MOSFET has been designed to minimize losses in power

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVTFS5811NL

...Power MOSFET NVTFS5811NL Power MOSFET 40V 40A 6.7 mOhm Single N-Channel u8FL Logic Level [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Place of Origin:Taiwan

Brand Name:Motorola, Inc

Model Number:MRF136

Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ...

Brand Name:NXP

Model Number:PBSS5350T,215

Place of Origin:China

PBSS5350T,215 PNP Transistor 40V Voltage 3A Current Low Vce(sat) High Efficiency SOT-223 Package Halogen-Free Pb-Free Robust Performance for Power Switching andamp; Amplification andnbsp; Features andbull; Low collector-emitter saturation voltage VCEsat...

Brand Name:CANYI

Model Number:AO3400

Place of Origin:Guangdong, China

AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V ...

Brand Name:xingtongli

Model Number:GKDH40-60CVC

Place of Origin:China

small portable polarity reverse SMP power supply 40V 60A for electrolysis Application of small portable polarity reverse SMP power supply 40V 60A It is mainly used in the electrolysis of non-ferrous metals: aluminum, magnesium, zinc, lead, copper, ...

Brand Name:Original Factory

Model Number:IPP65R190CFD7A

Place of Origin:CN

...FETs MOSFETs Transistors TO-220-3 Integrated Circuit Chip​ Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R190CFD7A Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V Power...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Brand Name:Julun

Model Number:PG-TO 252/PG-TO 251

Place of Origin:CHINA

IPD70R1K4CE, IPS70R1K4CE FET 700V CoolMOS CE Power Transistor MOS tube Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to ...