diode transistor fdg6321c

Model Number:6N136-000E

Product Overview These Broadcom diode-transistor optocouplers provide electrical insulation between input and output using an insulating layer between an LED and an integrated photodetector. Optimized for high speed, they offer significantly faster ...

Brand Name:Fanyi

Model Number:PWB Ruler

Place of Origin:Guangdong, China

...Capacitor Chip IC SMD Diode Transistor Package PCB Engineering Ruler Product Descriptiom Brand Fanyi Item Multi-function PCB Ruler Color Matte Black,Green,Yellow,Black,Red,White Ruler marked Resistor,Capacitor,IC,SMD Diode Transistor Package Material FR4 ...

Model Number:PHD13003C,126

... requiring fast switching, high DC current gain, and high voltage capability. This transistor is suitable for use in compact fluorescent lamps (CFL), low power electronic lighting ballasts, and off-line self-oscillating power ...

Brand Name:STMicroelectronics

Model Number:STGWA19NC60HD GWA19NC60HD

...STGWA19NC60HD GWA19NC60HD ultrafast IGBT 31 A 600 V very fast IGBT with Ultrafast diode Transistors - IGBTs - Single 31 A, 600 V, very fast IGBT with Ultrafast diode Product details Description : This device is an ultrafast IGBT. It utilizes the advanced ...

Brand Name:TOS

Model Number:2SC3265Y

Place of Origin:Japan

2SC3265Y Rectifier Diode Transistor Electronics Components Chip IC Electronics Low Frequency Power Amplifier Applications Power Switching Applications • High DC ...

Categories:Transistors - FETs, MOSFETs - Arrays

Country/Region:china

... refer to the data sheet, such as PDF files Docx documents, etc. We have FDG6321C high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Brand Name:Infineon

Model Number:IKW15N120T2

Place of Origin:Original Factory

...15 A TRENCHSTOP™ IGBT co-packed with free-wheeling diode in a TO-247 package provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of ...

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBD1501A

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Typical Characterisitics ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MMBD1501A

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Typical Characterisitics ...

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:IXSN35N120U1

Quick Detail: High Voltage IGBT with Diode Description: VCES = 1200 V IC25 = 70 A VCE(sat) = 4 V Applications: ● International standard package mini BLOC (ISOTOP) compatible ● Aluminium-nitride isolation - high power dissipation ● Isolation voltage 3000...

Brand Name:ST

Model Number:STTH6003CW

Place of Origin:Original

Electronic components STTH6003CW TO-247 mosfet diode new ic chip Model number STTH6003CW Package TO- 247 D/ C 19+ 18+ 17+ Type Diode/ IC chip Condition In stock Email sales07@wtxcapacitors.com More product: Payment and shipping: A. By Express-such as DHL, ...

Brand Name:Original

Model Number:L2SC3356LT1G

Transistors L2SC3356LT1G CHIPSET 2SC3356 MARKING R25 R24 L2SC3356LT1G 2SC3356K SOT-23 C3356 original screen L2SC3356LT1G R24 SOT-23 12V / 100mA SMD transistor L2SC3356LT1G ME2808A27M3G SST4401T116 MMBZ33VALFHT116 MMBZ6V8ALFHT116 SOT-23 SOT23 L2SC3356LT1G R24 SOT-23 12V100mA Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors...

Country/Region:china

...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor...

Brand Name:IXYS

Model Number:IXBT14N300HV

IXBT14N300HV IGBT 3000 V 38 A 200 W Surface Mount TO-268HV (IXBT) IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal...

Model Number:LCR55A

Place of Origin:china

Brand Name:Amprobe

...Product) can determine theThe ultimate electronic component verifier measures inductance, capacitance, resistance, transistors, diodes and microwave diodes. surface temperature by measuring the amount of infrared energy radiated by the target’s surface.

Brand Name:Original Factory

Model Number:BSZ100N03MSGATMA1

Place of Origin:China

... Breakdown Voltage: 30 V Id - Continuous Drain Current: 40 A Fall Time: 2.4 Ns Transistor Type: 1 N-Channel Rds On - Drain-Source Resistance: 7.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - ...

Brand Name:Infineon Technologies

Model Number:IKW75N60T

Place of Origin:China

...Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode