cgh55015f2 gan mosfet

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...

Brand Name:Original Factory

Model Number:LMG3425R050RQZR

Place of Origin:CN

Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver​ Description LMG3425R050RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared...

Model Number:CGH55015F2

... to the data sheet, such as PDF files Docx documents, etc. We have CGH55015F2 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:Original

CGH55015F2 Specifications Part Status Active Transistor Type HEMT Frequency 5.65GHz Gain 12dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 200mA Power - Output 12.5W Voltage - Rated 84V Package / Case 440166 Supplier Device Package ...

Model Number:CGH55015F2

RF Mosfet 28 V 200 mA 5.65GHz 12dB 12.5W 440166

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 200 mA 5.65GHz 12dB 12.5W 440166

Model Number:HIGLD60R190D1

HIGLD60R190D1 650V GaN-on-Silicon Enhancement-mode Power Transistor The HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high ...

Categories:RF Transistors

Country/Region:china

QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds...

Model Number:ACPL-P346-060E

...: High-Performance Gate Drive for Power MOSFETs The Broadcom ACPL-P346/W346 is an optically isolated power output stage designed for driving power, GaN (Gallium Nitride), and SiC (Silicon Carbide) MOSFETs. Leveraging BCDMOS technology, this gate drive...

Brand Name:Original

Model Number:UCC27524ADR

Place of Origin:Original

UCC27524ADR Gate Door Drivers LT8607EDC#TRMPBF DS2430AP+ PMIC Power Management ICs Applications • Switch-Mode Power Supplies • DC-to-DC Converters • Motor Control, Solar Power • Gate Drive for Emerging Wide Band-Gap Power Devices Such as GaN Description (...

Brand Name:zmkj

Model Number:4inch--N,4H-semi

Place of Origin:china

... diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED Advantagement • Low lattice mismatch • High thermal conductivity • Low power consumption • Excellent transient

Brand Name:TI

Model Number:UCC5350MCDR

Place of Origin:USA

..., and GaN FETs (UCC5350SBD). The UCC53x0S provides a split output that controls the rise and fall times individually. The UCC53x0M connects the gate of the transistor to an ...