c plane 0001 sapphire wafer

Brand Name:BonTek

Model Number:Sapphire (Al2O3)

Place of Origin:China

C-plane 0001 Sapphire Wafer Al2O3 Substrate for Infrared Window LED and Blue Laser Al2O3 single crystal (Sapphire, also known as white stones, sapphire) has good thermal properties, excellent electrical characteristics and dielectric properties, and anti-...

Brand Name:zmkj

Model Number:4.125/6.125/6inch/8inch

Place of Origin:China

... 2inch Dia50mm C axis Single Crystal Sapphire Wafer Sapphire Substrates 8inch Dia 159mm Single Crystal Sapphire Wafer For Epi - Ready Carrier 4inch/ 5inch/ 6inch/ 6.125inch/8inch c-plane R-axis (1-102) (10-10) sapphire wafer,dia200mm sapphire substrates ,2

Place of Origin:Chongqing, China

C-Plane Orientation Single Side Polished Sapphire Wafer in 4 inch Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent multifunctional material. It has high temperature resistance, good thermal ...

Brand Name:ZMSH

Model Number:Sapphire subatrate

Place of Origin:China

Sapphire Wafer 6inch DSP SSP C-plane(0001) 99,999% High Purity Monocrystalline Al2O3 LED Product Description of 6inch Sapphire Wafer: Sapphire wafers are a type of mineral with characteristics such as high hardness (9.0 Mohs), good transparency, and chemical stability. Sapphire wafers can be classified into two categories: natural sapphire and synthetic sapphire. Synthetic sapphire wafers...

Brand Name:PAM-XIAMEN

Place of Origin:China

Plane (0001) 4 Inch Semi-Insulating GaN Epitaxial Layer On Sapphire Substrates PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), aluminum nitride (AlN),aluminum gallium nitride (AlGaN)and indium gallium nitride (InGaN), which are deposited on sapphire...

Brand Name:Silian

Model Number:100mm /4 inch

Place of Origin:China

...Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm Thickness 650um ± 20um / 850um ± 20um Bow <10 microns Warp <20 microns TTV <10 microns Major Flat M-axis +0.3°; 32+1mm Minor Flat None Front Side < 0.30nm Back Side <1.2 micron Laser ID marked on backside by major flat Packaged Cassette containing 25 wafers...

Place of Origin:China

...plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) Resistivity(300K): < 0.5 Ω·cm; < 0.05 Ω·cm; ~ 10 Ω·cm Carrier Concentration: < 5x1017 cm-3; > 1x1018 cm-3; > 6x1016 cm-3 Mobility: ~ 300cm2/V·s; ~ 200 cm2/V·s; ~ 10 cm2/V·s Dislocation Density: Less than 5x108 cm-2 Substrate structure: GaN on Sapphire...