c die dram memory chip ddr4

Brand Name:Original Factory

Model Number:K4A4G085WF-BCWE

Place of Origin:CN

...0 to 95°C TC. K4A4G085WF-BCWE has a memory-capacity of 4Gb and is organized as 512Mx8 coming in a RoHS-compliant BGA 78 ball package. The data-rate is specified with 3200 ...

Brand Name:original

Model Number:MT40A512M16LY-075:E

Place of Origin:original

MT40A512M16LY-075-E Original DRAM DDR4 8G 512MX16 FBGA Memory Data Storage Features • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC ...

Brand Name:Micron

Model Number:MT40A1G16TB-062E:F

Place of Origin:original

... Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 1.5 GHz Write Cycle Time - Word, Page 15ns Access Time 19 ns ...

Brand Name:LASTINGIN

Place of Origin:GuangDong

LASTINGIN DDR4 ECC RAM: Industrial-Grade Reliability Speed Boost: Up to 3200MHz frequency delivers lightning-fast data transfer, making gaming, browsing, and application use smoother. Reduce input lag and load times for a more responsive system. Stability ...

Categories:RAM Memory

Country/Region:china

Why DDR5-4800 at 8GB? The most cost-efficient entry point into the DDR5 ecosystem for office fleets, educational labs, and budget desktop builds where every dollar of BOM cost matters. At 1.1V, this module draws measurably less power than any DDR4 ...

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ...

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Features • VDD = VDDQ = +1.5V ±0.075V • 1.5V center-terminated push/pull I/O • Differential bidirectional data strobe • ...

Brand Name:Micron Technology Inc.

Model Number:MT40A512M16LY-062E IT:E

MT40A512M16LY-062E IT:E MemoryType Volatile MemoryFormat DRAM Technology SDRAM - DDR4 MemorySize 8Gb (512M x 16) MemoryInterface Parallel ClockFrequency 1.6 GHz WriteCycleTime-WordPage - AccessTime - Voltage-Supply 1.14V ~ 1.26V OperatingTemperature -40...