bll1214 35 112 mosfet transistor

Model Number:BLL1214-35,112

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLL1214-35,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 36 V 50 mA 1.2GHz ~ 1.4GHz 13dB 35W SOT467C

Model Number:BLL1214-35,112

RF Mosfet 36 V 50 mA 1.2GHz ~ 1.4GHz 13dB 35W SOT467C

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 36 V 50 mA 1.2GHz ~ 1.4GHz 13dB 35W SOT467C

Place of Origin:Original

BLL1214-250R,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 1.2GHz ~ 1.4GHz Gain 13dB Voltage - Test 36V Current Rating - Noise Figure - Current - Test 150mA Power - Output 250W Voltage - Rated 75V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLL1214-250R,112...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Brand Name:Original Factory

Model Number:MSC035SMA070B

Place of Origin:CN

MOSFETs Transistors MSC035SMA070B Integrated Circuit Chip TO-247-3 N-Channel​ Product Description Of MSC035SMA070B MSC035SMA070B is a 700 V, 35 mΩ SiC MOSFET in a TO-247 package. Fast and reliable body diode, Superior avalanche ruggedness. Specification...

Model Number:IRFP6227

Place of Origin:United States

Brand Name:Original

#detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:...

Brand Name:onsemi

Model Number:NVD5117PLT4G-VF01

Place of Origin:Multi-origin

NVD5117PLT4G-VF01 MOSFET Power Electronics The NVD5117PLT4G-VF01 is a MOSFET Power Electronics device with a low on-resistance and fast switching speed. It is a high-power, low-voltage device for use in automotive, industrial, and consumer electronic ...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

Mosfet Power Transistor TPH2R306NH1,LQ Toshiba Automotive 190A 60V 1.9 MOhms U-MOS Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers Description Toshiba Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

2N60-TC3 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged ...

Brand Name:Original

Model Number:IPG20N06S2L-35

Place of Origin:Original

IPG20N06S2L-35 MOSFET IPG2N6S2L35XT SP000613718 IPG20N06S2L35ATMA1 2 N Channel TCAN1042HGVDRQ1 TJA1027T/20 Semiconductor Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics...

Brand Name:Original Factory

Model Number:BSZ050N03LSGATMA1

Place of Origin:China

... Digital Signature Algorithm (ECDSA):ECDSA-based authentication Product Specifications Gate Charge (Qg) (Max) @ Vgs: 35 NC @ 10 V Technology: MOSFET (Metal Oxide) FET Type N-Channel Drain to Source Voltage (Vdss) 30 V Drive Voltage (Max Rds On,

Model Number:2N7002

2N7002DW K27 72K 2N7002 7002 SOT363 SMD Transistor In Stock 2N7002 702/7002 SOT-23 2N7002LT 2N7002 7002 N-Channel MOSFET 2N7000 / 2N7002 / NDS7002AN-Channel Enhancement Mode Field Effect Transistor Features • High Density Cell Design for Low RDS(ON) • ...

Categories:Diodes Ic

Country/Region:china

...MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TSOT-26-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.5 A, 3.1 A Rds On - Drain-Source Resistance: 35...