blf8g27ls 140 118 mosfet transistor

Model Number:BLF8G27LS-140,118

BLF8G27LS-140,118 Overview\\\\nBLF8G27LS-140,118 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G27LS-140,118...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Model Number:BLF8G27LS-140,118

RF Mosfet 32 V 1.3 A 2.62GHz ~ 2.69GHz 17.4dB 45W SOT502B

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 32 V 1.3 A 2.62GHz ~ 2.69GHz 17.4dB 45W SOT502B

Model Number:BLF8G27LS-140,118

RF Mosfet 32 V 1.3 A 2.62GHz ~ 2.69GHz 17.4dB 45W SOT502B

Place of Origin:Original

BLF8G27LS-140V,118 Specifications Part Status Active Transistor Type LDMOS Frequency 2.63GHz ~ 2.69GHz Gain 17.4dB Voltage - Test 32V Current Rating - Noise Figure - Current - Test 1.3A Power - Output 45W Voltage - Rated 65V Package / Case SOT-1120B Supplier Device Package CDFM6 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF8G27LS-140V,118...

Brand Name:Original Factory

Model Number:IMW120R140M1H

Place of Origin:CN

Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole Product Description Of IMW120R140M1H IMW120R140M1H is CoolSiC™ 1200 V, 140 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process ...

Brand Name:Anterwell

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Brand Name:Nexperia

Model Number:BUK761R7-40E,118

...118 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type N-Channel Technology MOSFET...

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Place of Origin:US

Brand Name:Original

Model Number:2SD1047

High power NPN epitaxial planar bipolar transistor d1047 b817 Product Description Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS86500DC

High Power MOSFET FDMS86500DC N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Model Number:NGTG35N65FL2WG-HXY

Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Categories:Diodes Ic

Country/Region:china

...MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TSOT-26-6 Transistor Polarity: N-Channel, P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.4 A, 2.8 A Rds On - Drain-Source Resistance: 100 mOhms, 140...