blf8g10ls 160 118 mosfet transistor

Model Number:BLF8G10LS-160,118

BLF8G10LS-160,118 Overview\\\\nBLF8G10LS-160,118 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G10LS-160,118...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Model Number:BLF8G10LS-160,118

RF Mosfet 30 V 1.1 A 920MHz ~ 960MHz 19.7dB 35W SOT502B

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 30 V 1.1 A 920MHz ~ 960MHz 19.7dB 35W SOT502B

Model Number:BLF8G10LS-160,118

RF Mosfet 30 V 1.1 A 920MHz ~ 960MHz 19.7dB 35W SOT502B

Place of Origin:Original

...160,118 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.11GHz ~ 2.17GHz Gain 18dB Voltage - Test 28V Current Rating 36A Noise Figure - Current - Test 1.3A Power - Output 43W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF7G22L-160,118...

Brand Name:TOSHIBA

Model Number:2SC5200-O

Place of Origin:Original

...mosfet transistors STOCK LIST MPC89E58AF 5910 MEGAWIN 16+ PQFP CS4398-CZZR 2234 CIRRUS 15+ TSSOP LC4064V-75TN100-10I 3070 LATTICE 15+ QFP ME0550-02DA 595 IXYS 14+ IGBT MDD26-14N1B 5902 IXYS 16+ IGBT MT9V024IA7XTM 2499 ON 15+ BGA MCC21-1408B 4756 IXYS 14+ IGBT CM100DU-24NFH 378 MITSUBI 15+ MODULE 6RI100E-080 958 FUJI 15+ MODULE PM150RSD060 250 MITSUBISH 10+ MOUDLE PK160F-160...

Model Number:P10NK80ZFP

Place of Origin:original factory

STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A 9 A 9 A 160 W 40 W ...

Brand Name:Nexperia

Model Number:BUK761R7-40E,118

...118 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type N-Channel Technology MOSFET...

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS86500DC

High Power MOSFET FDMS86500DC N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...

Brand Name:Original Factory

Model Number:NTHL160N120SC1

Place of Origin:CN

... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds ...

Model Number:NGTG35N65FL2WG-HXY

Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Categories:Vishay Ic

Country/Region:china

... Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-8x8-4 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 160 A Rds On ...