blf6g38 50 135 rf power transistor

Model Number:BLF6G38-50,135

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G38-50,135 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Place of Origin:PHILIPPINE

Model Number:BLF7G27L-135

BLF7G27L-135 is a RF Manual 16th edition. Part NO: BLF7G27L-135 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used...

Brand Name:Silicon Labs

Model Number:SI4355-B1A-FMR

Place of Origin:Multi-origin

...RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • RoHS Compliant Specifications: • Frequency Range: 400 MHz - 2.7 GHz • Output Power: >20W • Gain: >15 dB • Noise Figure: <3.5 dB • Efficiency: >50% • Input VSWR: <1.2:1 • Output VSWR: <1.5:1 • Input Impedance: 50 ohm • Output Impedance: 50...

Model Number:BLF6G38-50,135

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Model Number:BLF6G38-50,135

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 450 mA 3.4GHz ~ 3.6GHz 14dB 9W SOT502A

Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Place of Origin:Original

BLF6G27-45,135 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.7GHz Gain 18dB Voltage - Test 28V Current Rating 20A Noise Figure - Current - Test 350mA Power - Output 7W Voltage - Rated 65V Package / Case SOT-608A Supplier Device ...

Place of Origin:China

Brand Name:OEM

... RF Power Amplifier Module Fpv Jammer Module for Anti Uav Drone Detector Product Parameters Place of Origin Guangdong,China Brand Name PDFY Module name 1.2Ghz 50W module Frequency 1.2GHz Supply Voltage DC 24-28V Power 50W Size 135*50*20.0mm Weight 136g

Place of Origin:Guangdong, China

Brand Name:LDSK

Product overview 900mhz 860-930MHZ 50W module anti-drone module Power and Frequnecy support Customzation form 90MHZ- 5.8g, 10W,20W,30W, 40W, 50w,100W --The radio frequency and monitoring technical indicators of the power amplifier module stipulate the ...

Brand Name:Keysight (Agilent)

Model Number:10020A

Place of Origin:Malaysia

Keysight Agilent 10020A Resistive Divider Probe Kit Pre-Owned Product Overview The Keysight (Agilent) 10020A Resistive Divider Probe Kit is a signal probing system for measuring fast-transition-time signals in high-impedance systems. It is designed for use...

Brand Name:Microchip / Microsemi

Model Number:JAN2N2222A

Place of Origin:ORIGINAL

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ...

Model Number:PBSS5350Z,135

Product Overview The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high current gain (...

Place of Origin:Guangdong, China (Mainland)

Brand Name:Lifeel

Model Number:LW408

...rf laser slimming machine 4 in 1 Parameter -MEAS: 73cmx55cmx118cm -N. W.: 55KG. -Screen:8.4 Inch Thin Film Transistor Color Touch Panel -Cooling System:Wind Cooling+Water Cooling+Semiconductor -E-light Power:1000W -Lamp Longevity:100000shots -IPL Wavelength:480nm/530nm/560/580/640nm/(fixed) -Energy:0-50J/CM2(IPL)0-50/CM2(RF) -Laser Power...

Place of Origin:China

Model Number:CA423

Brand Name:SUCE

...rf function Vltage AC 110V/220V 50-60Hz Power 600W Pressure output 0-90Kpa Screen 10.1 inch touch screen Boby RF/Face RF 5MHz Lipo laser 650nm Cryo temperature -10 °C~45°C Size of big cryo handle cups 180*70*15mm/200*70*35mm 205*80*45mm/230*80*45mm Size of medium cryo handle cups 135...

Categories:Analog Devices ADI

Country/Region:china

The HMC349AMS8GE is a gallium arsenide (GaAs), pseudo - morphic high electron mobility transistor (PHEMT), single - pole, double - throw (SPDT) switc. Functions Frequency Range: It is specified for operation from 100 MHz to 4 GHz. Impedance Design: ...

Brand Name:XYY

Model Number:EY-03

Place of Origin:China(mainland)

... Lamp Longevity 100000shots IPL Wavelength 480nm/530nm/560/580/640nm/(fixed) Energy 0-50J/CM2(IPL)0-50/CM2(RF) Laser Power 350W Frequency 1-6HZ Energy Level 1-50level Laser 1064nm,532nm, Warranty 2 Year Mark CE Quick Detail: 1.