blf6g27s 45 118 mosfet transistor

Model Number:BLF6G27S-45,118

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27S-45,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF Amplifier

Country/Region:china

The BLF6G27S-45,118,from Ampleon USA Inc.,is RF Amplifier.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the ...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 350 mA 2.7GHz 18dB 7W CDFM2

Model Number:BLF6G27S-45,118

RF Mosfet 28 V 350 mA 2.7GHz 18dB 7W CDFM2

Place of Origin:Original

...45,118 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 1.8GHz ~ 1.88GHz Gain 19.2dB Voltage - Test 28V Current Rating 13A Noise Figure - Current - Test 360mA Power - Output 2.5W Voltage - Rated 65V Package / Case SOT-608B Supplier Device Package CDFM2 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G20S-45,118...

Model Number:BLF6G27S-45,135

RF Mosfet 28 V 350 mA 2.7GHz 18dB 7W CDFM2

Brand Name:Anterwell

Model Number:BC847C

Place of Origin:original factory

NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking Package Code BC846AT/...

Brand Name:Original Factory

Model Number:SCTWA35N65G2V

Place of Origin:CN

...MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package. Specification Of SCTWA35N65G2V Part Number SCTWA35N65G2V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 45...

Brand Name:onsemi

Model Number:FQD2N90TM

Place of Origin:Multi-origin

FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a wide range of applications. This device features low on-resistance, fast switching speed, and high current ...

Brand Name:Nexperia

Model Number:BUK761R7-40E,118

...118 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type N-Channel Technology MOSFET...

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Brand Name:Mitsubishi

Model Number:RA45H8994M1-101

Place of Origin:JP

...transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS86500DC

High Power MOSFET FDMS86500DC N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Brand Name:Original

Model Number:IRLML2502TRPBF

Place of Origin:Original

MOSFET IRLML2502TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.2 A Rds On - Drain-Source Resistance: 45...

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...

Brand Name:CJ

Model Number:CJ2312

Place of Origin:CN

CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ...

Model Number:NGTG35N65FL2WG-HXY

Product Overview The NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It offers easy paralleling capability due to its positive temperature coefficient in VCESAT, low EMI, low gate charge, and low ...

Brand Name:Infineon

Model Number:BSP149H6327XTSA1

MOSFET N-Ch 200V 660mA SOT-223-3 Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: N-Channel Number of ...