blf6g27ls 135 112 mosfet transistor

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Model Number:BLF6G27LS-135,112

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Model Number:BLF6G27LS-100,112

... refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27LS-100,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:Original

BLF6G27LS-100,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency - Gain - Voltage - Test 28V Current Rating 29A Noise Figure - Current - Test 900mA Power - Output 14W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G27LS-100,112...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Model Number:BLF6G27LS-75,112

RF Mosfet 28 V 600 mA 9W SOT502B

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Model Number:IRFP6227

Place of Origin:United States

Brand Name:Original

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Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Brand Name:AOS

Model Number:AO4430

Place of Origin:original

AO4430 MOSFET Power Electronics Discrete Semiconductor Transistors N-Channel 30V 3W Surface Mount Package 8-SOIC ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:Original Factory

Model Number:NVBG020N090SC1

Place of Origin:CN

... Transistors, package is D2PAK-7L. Specification Of NVBG020N090SC1 Part Number: NVBG020N090SC1 Vds - Drain-Source Breakdown Voltage: 900 V Id - Continuous Drain Current: 112 A Rds On - Drain-Source Resistance: 28 mOhms Vgs - Gate-Source Voltage: - 8 V, +

Categories:Onsemi Ic

Country/Region:china

...MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 1.2 A Rds On - Drain-Source Resistance: 135...